Dr. Serdal Okur Profile

Dr. Serdal Okur

Senior Engineer at Princeton Optronics Inc (AMS AG)

SPIE Involvement:

Author

Area of Expertise:

VCSEL , III-V , Semiconductor , III-N

Websites:

Company Website | Personal Website

Publications (22)

Proceedings Article | 5 March 2021 Presentation

Multi-junction vertical-cavity surface-emitting lasers in the 800-1100nm wavelength range

Jean-Francois Seurin, Guoyang Xu, Alexander Miglo, Robert Van Leeuwen, Hasan Othman, Serdal Okur, Yu Zhang, Abdenour Amtout, Haijiao Bian, Hairong Yuan, Edward Shaw

Proceedings Volume 11704, 117040B (2021) https://doi.org/10.1117/12.2578767

KEYWORDS: Vertical cavity surface emitting lasers, Resistance, Reflectivity, Near infrared, Mirrors, LIDAR, Absorption

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Proceedings Article | 1 March 2019 Presentation + Paper

High-power VCSEL arrays with customized beam divergence for 3D-sensing applications

Serdal Okur, Maik Scheller, Jean-Francois Seurin, Alexander Miglo, Guoyang Xu, Dingkai Guo, Robert Van Leeuwen, Baiming Guo, Hasan Othman, Laury Watkins, Chuni Ghosh

Proceedings Volume 10938, 109380F (2019) https://doi.org/10.1117/12.2508485

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Oxidation, Calibration, High power lasers, Beam shaping, Three dimensional sensing, Refractive index, Semiconducting wafers, Facial recognition systems

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Proceedings Article | 13 March 2015 Paper

Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

Nuri Can, Serdal Okur, Morteza Monavarian, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, Ali Teke, Ümit Özgür

Proceedings Volume 9363, 93632U (2015) https://doi.org/10.1117/12.2179637

KEYWORDS: Light emitting diodes, Quantum efficiency, Indium gallium nitride, Luminescence, Excitons, Quantum wells, Polarization, Internal quantum efficiency, External quantum efficiency, Temperature metrology

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Proceedings Article | 13 March 2015 Paper

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

Daniel Rosales, Bernard Gil, Morteza Monavarian, Fan Zhang, Serdal Okur, Natalia Izyumskaya, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç

Proceedings Volume 9363, 93630J (2015) https://doi.org/10.1117/12.2076207

KEYWORDS: Lab on a chip, Luminescence, Excitons, Gallium nitride, Quantum wells, Polarization, Silicon, Picosecond phenomena, Oscillators, Anisotropy

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Proceedings Article | 13 March 2015 Paper

Strong carrier localization in stacking faults in semipolar (11-22) GaN

Serdal Okur, Morteza Monavarian, Saikat Das, Natalia Izyumskaya, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür

Proceedings Volume 9363, 93632N (2015) https://doi.org/10.1117/12.2080248

KEYWORDS: Gallium nitride, Excitons, Polarization, Point spread functions, Luminescence, Crystals, Temperature metrology, Applied physics, Quantum wells, Aluminum nitride

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Proceedings Article | 13 March 2015 Paper

Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates

Serdal Okur, Alexander Franke, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, Frank Bertram, Juergen Christen, Ümit Özgür

Proceedings Volume 9363, 93632O (2015) https://doi.org/10.1117/12.2080265

KEYWORDS: Gallium nitride, Polaritons, Optical microcavities, Reflectivity, Excitons, Photons, Indium gallium nitride, Quantum wells, Luminescence, Temperature metrology

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Proceedings Article | 13 March 2015 Paper

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Morteza Monavarian, Sebastian Metzner, Natalia Izyumskaya, Serdal Okur, Fan Zhang, Nuri Can, Saikat Das, Vitaliy Avrutin, Ümit Özgür, Frank Bertram, Jürgen Christen, Hadis Morkoç

Proceedings Volume 9363, 93632P (2015) https://doi.org/10.1117/12.2080325

KEYWORDS: Indium, Gallium nitride, Light emitting diodes, Indium gallium nitride, Heterojunctions, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Quantum efficiency, Indium nitride, Chemical vapor deposition

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Proceedings Article | 13 March 2015 Paper

Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers

Morteza Monavarian, Sebastian Metzner, Natalia Izyumskaya, Marcus Müller, Serdal Okur, Fan Zhang, Nuri Can, Saikat Das, Vitaliy Avrutin, Ümit Özgür, Frank Bertram, Juergen Christen, Hadis Morkoç

Proceedings Volume 9363, 93632I (2015) https://doi.org/10.1117/12.2079180

KEYWORDS: Gallium nitride, Epitaxial lateral overgrowth, X-ray optics, Scanning electron microscopy, Luminescence, X-ray diffraction, X-rays, Excitons, Sapphire, Chemical vapor deposition

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Proceedings Article | 8 March 2014 Paper

Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

N. Izyumskaya, S. Okur, F. Zhang, M. Monavarian, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç

Proceedings Volume 8986, 898628 (2014) https://doi.org/10.1117/12.2037930

KEYWORDS: Gallium nitride, Near field optics, Metalorganic chemical vapor deposition, Silicon, Near field scanning optical microscopy, Scanning electron microscopy, Point spread functions, Image quality, Excitons, Chemical vapor deposition

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Proceedings Article | 8 March 2014 Paper

Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si

S. Okur, N. Izyumskaya, F. Zhang, V. Avrutin, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç, Ü. Özgür

Proceedings Volume 8986, 89862B (2014) https://doi.org/10.1117/12.2040621

KEYWORDS: Gallium nitride, Near field optics, Light emitting diodes, Polarization, Silicon, Point spread functions, Near field scanning optical microscopy, Indium gallium nitride, Luminescence, Excitons

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Proceedings Article | 8 March 2014 Paper

Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs

Daniel Rosales, B. Gil, T. Bretagnon, F. Zhang, S. Okur, M. Monavarian, N. Izioumskaia, V. Avrutin, Ü. Özgür, H. Morkoç, J. Leach

Proceedings Volume 8986, 89860L (2014) https://doi.org/10.1117/12.2036984

KEYWORDS: Luminescence, Quantum wells, Polarization, Gallium nitride, Temperature metrology, Excitons, Anisotropy, Picosecond phenomena, 3D modeling, Tantalum

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Proceedings Article | 27 February 2014 Paper

Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements

Shopan Hafiz, Fan Zhang, Morteza Monavarian, Serdal Okur, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür

Proceedings Volume 9003, 90031R (2014) https://doi.org/10.1117/12.2040926

KEYWORDS: Light emitting diodes, Indium gallium nitride, Electron transport, Band structure simulations, Heterojunctions, Continuous wave operation, Helium cadmium lasers, Metalorganic chemical vapor deposition, Plasma etching, Electrodes

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Proceedings Article | 4 March 2013 Paper

Recombination dynamics in non-polar m-plane GaN investigated by time- and polarization-resolved photoluminescence

Serdal Okur, Kestutis Jarašiūnas, Shopan din Ahmad Hafiz, Jacob Leach, Tania Paskova, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür

Proceedings Volume 8625, 86252D (2013) https://doi.org/10.1117/12.2005252

KEYWORDS: Excitons, Polarization, Gallium nitride, Luminescence, Temperature metrology, Spectroscopy, Dual energy x-ray absorptiometry, Polarizers, Continuous wave operation, Time resolved spectroscopy

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Proceedings Article | 4 March 2013 Paper

GaN-based vertical cavity lasers with semiconductor/dielectric and all dielectric reflectors

F. Zhang, S. Okur, S. Hafiz, V. Avrutin, Ü. Özgür, H. Morkoç

Proceedings Volume 8625, 86252F (2013) https://doi.org/10.1117/12.2005442

KEYWORDS: Dielectrics, Gallium nitride, Epitaxial lateral overgrowth, Reflectivity, Semiconductor lasers, Etching, Reflectors, Quantum wells, Indium gallium nitride, Modulation

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Proceedings Article | 4 March 2013 Paper

InGaN based multi-double heterostructure light-emitting diodes with electron injector layers

F. Zhang, S. Hafiz, X. Li, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç

Proceedings Volume 8625, 86251J (2013) https://doi.org/10.1117/12.2003162

KEYWORDS: Light emitting diodes, Electroluminescence, Indium gallium nitride, Quantum efficiency, External quantum efficiency, Heterojunctions, Internal quantum efficiency, Temperature metrology, Quantum wells, Luminescence

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Proceedings Article | 4 March 2013 Paper

Depth distribution of carrier lifetimes in semipolar (1101) GaN grown by MOCVD on patterned Si substrates

N. Izyumskaya, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç

Proceedings Volume 8625, 86252G (2013) https://doi.org/10.1117/12.2005514

KEYWORDS: Gallium nitride, Near field scanning optical microscopy, Silicon, Metalorganic chemical vapor deposition, Optical properties, Near field optics, Luminescence, Light emitting diodes, Carrier dynamics, Temperature metrology

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Proceedings Article | 28 February 2012 Paper

Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques

Kęstutis Jarašiūnas, Patrik Ščajev, Saulius Nargelas, Ramūnas Aleksiejūnas, Jacob Leach, Tania Paskova, Serdal Okur, Ümit Özgür, Hadis Morkoç

Proceedings Volume 8262, 82620G (2012) https://doi.org/10.1117/12.906303

KEYWORDS: Diffusion, Gallium nitride, Carrier dynamics, Luminescence, Excitons, Picosecond phenomena, Interfaces, Crystals, Transient nonlinear optics, Absorption

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Proceedings Article | 28 February 2012 Paper

Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells

T. Malinauskas, A. Kadys, T. Grinys, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, J. Mickevičius, R. Tomašiūnas, K. Jarašiūnas, M. Vengris, S. Okur, V. Avrutin, X. Li, F. Zhang, Ü. Özgür, H. Morkoç

Proceedings Volume 8262, 82621S (2012) https://doi.org/10.1117/12.906488

KEYWORDS: Quantum wells, Indium gallium nitride, Indium, Picosecond phenomena, Light emitting diodes, Diffusion, Gallium nitride, Carrier dynamics, Absorbance, Diffraction

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Proceedings Article | 28 February 2012 Paper

Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

N. Izyumskaya, S. Liu, V. Avrutin, S. Okur, F. Zhang, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, D. Smith, H. Morkoç

Proceedings Volume 8262, 826224 (2012) https://doi.org/10.1117/12.909235

KEYWORDS: Gallium nitride, Silicon, Sapphire, Metalorganic chemical vapor deposition, Optical properties, Scanning electron microscopy, Quantum wells, Light emitting diodes, Luminescence, Chemical vapor deposition

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Proceedings Article | 10 February 2012 Paper

The impact of active layer design on quantum efficiency of InGaN light emitting diodes

F. Zhang, X. Li, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, S. Hong, S. Yen, T. Hsu, A. Matulionis

Proceedings Volume 8262, 82621G (2012) https://doi.org/10.1117/12.903931

KEYWORDS: Light emitting diodes, External quantum efficiency, Indium gallium nitride, Quantum efficiency, Quantum wells, Lithium, Gallium, Electroluminescence, Gallium nitride, Nickel

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Proceedings Article | 4 March 2011 Paper

Impact of ballistic electron transport on efficiency of InGaN based LEDs

F. Zhang, X. Li, S. Liu, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, M. Kisin

Proceedings Volume 7939, 793917 (2011) https://doi.org/10.1117/12.875806

KEYWORDS: Light emitting diodes, Electron beam lithography, External quantum efficiency, Indium gallium nitride, Electron transport, Aluminum, Electroluminescence, Gallium nitride, Polarization, Phonons

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Proceedings Article | 19 February 2011 Paper

Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates

N. Izyumskaya, S. J. Liu, S. Okur, M. Wu, V. Avrutin, Ü. Özgür, S. Metzner, F. Bertram, J. Christen, L. Zhou, D. Smith, H. Morkoç

Proceedings Volume 7939, 79391W (2011) https://doi.org/10.1117/12.875861

KEYWORDS: Gallium nitride, Silicon, Light emitting diodes, Sapphire, Metalorganic chemical vapor deposition, Scanning electron microscopy, Optical properties, Silica, Wet etching, Carbon

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Showing 5 of 22 publications

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