Dr. Sheng-Horng Yen Profile

Dr. Sheng-Horng Yen

at Epistar Corp

SPIE Involvement:

Author

Publications (13)

Proceedings Article | 10 February 2012 Paper

The impact of active layer design on quantum efficiency of InGaN light emitting diodes

F. Zhang, X. Li, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, S. Hong, S. Yen, T. Hsu, A. Matulionis

Proceedings Volume 8262, 82621G (2012) https://doi.org/10.1117/12.903931

KEYWORDS: Light emitting diodes, External quantum efficiency, Indium gallium nitride, Quantum efficiency, Quantum wells, Lithium, Gallium, Electroluminescence, Gallium nitride, Nickel

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Proceedings Article | 26 February 2010 Paper

Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells

Shu-Hsuan Chang, Miao-Chan Tsai, Sheng-Horng Yen, Shu-Jeng Chang, Yen-Kuang Kuo

Proceedings Volume 7597, 759721 (2010) https://doi.org/10.1117/12.841270

KEYWORDS: Solar cells, Sun, Gallium arsenide, Numerical simulations, Photons, Indium gallium phosphide, Device simulation, Electrons, Indium gallium arsenide, Computer simulations

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Proceedings Article | 24 February 2009 Paper

Numerical investigation of blue InGaN light-emitting diodes with staggered quantum wells

Bo-Ting Liou, Miao-Chan Tsai, Chih-Teng Liao, Sheng-Horng Yen, Yen-Kuang Kuo

Proceedings Volume 7211, 72111D (2009) https://doi.org/10.1117/12.808880

KEYWORDS: Quantum wells, Light emitting diodes, Indium gallium nitride, Polarization, Gallium nitride, Gallium, Computer simulations, Aluminum nitride, Indium nitride, Structural design

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Proceedings Article | 24 February 2009 Paper

Numerical simulation of 405-nm InGaN laser diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

Yen-Kuang Kuo, Ying-Chung Lu, Miao-Chan Tsai, Sheng-Horng Yen

Proceedings Volume 7211, 72111B (2009) https://doi.org/10.1117/12.808861

KEYWORDS: Indium gallium nitride, Semiconductor lasers, Gallium nitride, Polarization, Interfaces, Electron beam lithography, Aluminum, Gallium, Aluminum nitride, Indium nitride

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Proceedings Article | 14 September 2007 Paper

Effect of spontaneous and piezoelectric polarization on the optical characteristics of blue light-emitting diodes

Yen-Kuang Kuo, Sheng-Horng Yen, Miao-Chan Tsai, Bo-Ting Liou

Proceedings Volume 6669, 66691I (2007) https://doi.org/10.1117/12.733860

KEYWORDS: Polarization, Light emitting diodes, Quantum wells, Electrons, Indium gallium nitride, Gallium, Blue light emitting diodes, Gallium nitride, Interfaces, Optical properties

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Proceedings Article | 14 September 2007 Paper

Simulation of deep ultraviolet light-emitting diodes

Yen-Kuang Kuo, Sheng-Horng Yen, Yu-Wen Wang

Proceedings Volume 6669, 66691J (2007) https://doi.org/10.1117/12.734086

KEYWORDS: Polarization, Light emitting diodes, Gallium, Deep ultraviolet, Ultraviolet light emitting diodes, Aluminum, Electrons, Quantum wells, Aluminum nitride, Gallium nitride

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Proceedings Article | 13 October 2006 Paper

Numerical simulation of AlInGaN ultraviolet light-emitting diodes

Yen-Kuang Kuo, Sheng-Horng Yen, Jun-Rong Chen

Proceedings Volume 6368, 636812 (2006) https://doi.org/10.1117/12.685897

KEYWORDS: Aluminum, Quantum wells, Ultraviolet light emitting diodes, Gallium, Light emitting diodes, Electron beam lithography, Polarization, Indium gallium nitride, Computer simulations, Numerical simulations

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Proceedings Article | 13 October 2006 Paper

Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers

Bo-Ting Liou, Sheng-Horng Yen, Ming-Wei Yao, Mei-Ling Chen, Yen-Kuang Kuo, Shu-Hsuan Chang

Proceedings Volume 6368, 636814 (2006) https://doi.org/10.1117/12.685959

KEYWORDS: Doping, Quantum wells, Aluminum, Gallium, Semiconductor lasers, Optical simulations, Temperature metrology, Device simulation, Solids, Physics

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Proceedings Article | 3 March 2006 Paper

Investigation of band gaps and bowing parameters for zincblende III-nitride ternary alloys

Bo-Ting Liou, Sheng-Horng Yen, Yen-Kuang Kuo

Proceedings Volume 6121, 61210M (2006) https://doi.org/10.1117/12.644464

KEYWORDS: Aluminum, Gallium, Indium, Gallium nitride, Indium nitride, Aluminum nitride, Semiconductors, Indium gallium nitride, Binary data, Light emitting diodes

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Proceedings Article | 28 February 2006 Paper

Optimization study on active layers and optical performance for 1.3-μm AlGaInAs and InGaNAs semiconductor lasers

Yen-Kuang Kuo, Sheng-Horng Yen, Ming-Wei Yao

Proceedings Volume 6115, 611526 (2006) https://doi.org/10.1117/12.645196

KEYWORDS: Gallium, Quantum wells, Electrons, Semiconductor lasers, Optical simulations, Numerical simulations, Gallium arsenide, Aluminum, Active optics, Computer simulations

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Proceedings Article | 22 February 2006 Paper

Fabrication and simulation of ultraviolet AlGaInN light-emitting diodes

Sheng-Horng Yen, Bo-Jean Chen, Mei-Ling Chen, Yen-Kuang Kuo, Yi-An Chang, Hao-Chung Kuo

Proceedings Volume 6134, 61340N (2006) https://doi.org/10.1117/12.645464

KEYWORDS: Light emitting diodes, Quantum wells, Ultraviolet light emitting diodes, Aluminum, Ultraviolet radiation, Electrons, Gallium nitride, Instrument modeling, Continuous wave operation, Semiconductors

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Proceedings Article | 20 January 2005 Paper

Piezoelectric and thermal effects on optical properties of violet-blue InGaN lasers

Sheng-Horng Yen, Bo-Ting Liou, Mei-Ling Chen, Yen-Kuang Kuo

Proceedings Volume 5628, (2005) https://doi.org/10.1117/12.575319

KEYWORDS: Gallium, Indium gallium nitride, Polarization, Quantum wells, Electrons, Thermal effects, Gallium nitride, Optical properties, Optical simulations, Laser damage threshold

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Proceedings Article | 20 January 2005 Paper

Vegard’s law deviation in band gaps and bowing parameters of the wurtzite III-nitride ternary alloys

Bo-Ting Liou, Sheng-Horng Yen, Yen-Kuang Kuo

Proceedings Volume 5628, (2005) https://doi.org/10.1117/12.575300

KEYWORDS: Aluminum, Gallium, Indium nitride, Indium, Gallium nitride, Aluminum nitride, Semiconductors, Indium gallium nitride, Semiconductor lasers, Electrons

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Showing 5 of 13 publications

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