Mr. Tomoya Onitsuka Profile

Tomoya Onitsuka

at Tokyo Electron Kyushu Ltd

SPIE Involvement:

Author

Publications (11)

Proceedings Article | 9 April 2024 Presentation + Paper

Advanced processes in metal-oxide resists for high-NA EUV lithography

Cong Que Dinh, Seiji Nagahara, Kayoko Cho, Hikari Tomori, Yuhei Kuwahara, Tomoya Onitsuka, Soichiro Okada, Shinichiro Kawakami, Arisa Hara, Seiji Fujimoto, Makoto Muramatsu, Reiko Tsuzuki, Xiang Liu, Arame Thiam, Yannick Feurprier, Kathleen Nafus, Michael Carcasi, Lior Huli, Kanzo Kato, Alexandra Krawicz, Michael Kocsis, Peter De Schepper, Lauren McQuade, Kazuki Kasahara, Jara Garcia Santaclara, Rik Hoefnagels, Bruno La Fontaine, Ryan Miyakawa, Chris Anderson, Patrick Naulleau

Proceedings Volume 12957, 1295705 (2024) https://doi.org/10.1117/12.3010207

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Tin, Lithography, Etching

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One of the key steps in the pattern formation chain of extreme ultraviolet (EUV) lithography is the development process to resolve the resist pattern after EUV exposure. The traditional development process might be insufficient to achieve the requirements of ultra-high-resolution features with low defect levels. The aim of this paper is to establish a process to achieve a good roughness, a low defectivity at a low EUV dose, and capability for extremely-high-resolution for high numerical aperture (NA) and hyper-NA EUV lithography. A new development method named ESPERT™ (Enhanced Sensitivity develoPER Technology™) has been introduced to improve the performance of metal oxide-resists (MOR). ESPERT™ as a chemical super resolution technique effectively apodized the MOR chemical image, improving chemical gradient (higher exposure latitude (EL)) and reducing scums (fewer bridge defects). This new development method can also keep the resist profile vertical to mitigate the break defects. The performances of the conventional development and ESPERT™ were evaluated and compared using 0.33 NA EUV, 0.5 NA EUV, and electron beam (EB) exposures, for all line-space (LS), contact hole (CH), and pillar (PL) patterns. Using 0.33 NA EUV scanners on LS patterns, both bridge and break defects were confirmed to be reduced for all 32-nm-pitch, 28-nm-pitch, 26-nm-pitch LS patterns while reducing the EUV dose to size (DtS). In the electrical yield (1 meter length) test of breaks/bridges of 26-nm pitch structures, ESPERT™ reduced EUV dose while its combo yield was almost 100% over a wide dose range of 20mJ/cm². For CH patterns, in the case of 32-nm-pitch AEI (after etch inspection), EL was increased 7.5% up to 22.5%, while failure free latitude (FFL) was widened from 1-nm to 4-nm. A 16-nm-pitch LS pattern was successfully printed with 0.5 NA tool, while a 16-nm-pitch PL and an 18-nm-pitch CH patterns were also achieved with an EB lithography by ESPERT™. With ESPERT™, there was no pillar collapse observed for 12-nm half-pitch PL by 0.5 NA and 8-nm half-pitch PL by EB. With all the advantages of having a high exposure sensitivity, a low defectivity, and an extremely-high-resolution capability, this advanced development method is expected be a solution for high-NA EUV towards hyper-NA EUV lithography.

Proceedings Article | 1 May 2023 Poster + Paper

Establishment of new process technology for EUV lithography

Yuhei Kuwahara, Shinichiro Kawakami, Kanzo Kato, Soichiro Okada, Yuya Kamei, Tomoya Onitsuka, Takashi Yamauchi, Nanoka Miyahara, Congque Dinh, Lior Huli, Satoru Shimura

Proceedings Volume 12498, 124981F (2023) https://doi.org/10.1117/12.2657076

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Line edge roughness, Etching, Solubility, High volume manufacturing, Silicon carbide, Silicon, Scanning electron microscopy

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Proceedings Article | 11 November 2022 Presentation

Holistic litho-etch development to address patterning challenges towards high NA EUV

Seiji Nagahara, Arnaud Dauendorffer, Xiang Liu, Tomoya Onitsuka, Hisashi Genjima, Noriaki Nagamine, Yuhei Kuwahara, Yuya Kamei, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Yannick Feurprier, Marc Demand, Sophie Thibaut, Alexandra Krawicz, Steven Grzeskowiak, Katie Lutker-Lee, Eric Liu, Christopher Catano, Joshua LaRose, Jeffrey Shearer, Lior Huli, Philippe Foubert, Danilo De Simone

Proceedings Volume PC12292, PC122920N (2022) https://doi.org/10.1117/12.2642941

KEYWORDS: Extreme ultraviolet, Optical lithography, Extreme ultraviolet lithography, Etching, Plasma etching, Lithography, Yield improvement, Stochastic processes, Plasma, Photoresist materials

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Proceedings Article | 25 May 2022 Presentation + Paper

Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

Angélique Raley, Lior Huli, Steven Grzeskowiak, Katie Lutker-Lee, Alexandra Krawicz, Yannick Feurprier, Eric Liu, Kanzo Kato, Kathleen Nafus, Arnaud Dauendorffer, Nayoung Bae, Josh LaRose, Andrew Metz, Dave Hetzer, Masanobu Honda, Tetsuya Nishizuka, Akiteru Ko, Soichiro Okada, Yasuyuki Ido, Tomoya Onitsuka, Shinichiro Kawakami, Seiji Fujimoto, Satoru Shimura, Cong Que Dinh, Makoto Muramatsu, Peter Biolsi, Hiromasa Mochiki, Seiji Nagahara

Proceedings Volume 12056, 120560A (2022) https://doi.org/10.1117/12.2613063

KEYWORDS: Plasma etching, Etching, Extreme ultraviolet, Optical lithography, Plasma, Focus stacking software, Semiconducting wafers, Photoresist processing, Extreme ultraviolet lithography, Silicon carbide

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Proceedings Article | 25 May 2022 Poster + Presentation + Paper

Approaches to enable patterning of tight pitches towards high NA EUV

Hiroki Tadatomo, Arnaud Dauendorffer, Tomoya Onitsuka, Hisashi Genjima, Yasuyuki Ido, Soichiro Okada, Yuhei Kuwahara, Arisa Hara, Congque Dinh, Seiji Fujimoto, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Kenta Ono, Yannick Feurprier, Marc Demand, Ainhoa Romo Negreira, Seiji Nagahara, Blanco Victor, Philippe Foubert, Danilo De Simone

Proceedings Volume 12056, 120560F (2022) https://doi.org/10.1117/12.2614012

KEYWORDS: Etching, Optical lithography, Extreme ultraviolet, Bridges, Extreme ultraviolet lithography, Inspection, Image processing

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Extreme ultraviolet (EUV) lithography has been used for mass production for several years. Now the resolution limit of current 0.33 NA single exposure has been approaching. To enhance the resolution limit, high NA exposure tool has been developing. At the limit, not only the stochastic failures1, but also patterning trade-off has been becoming challenging. In this paper, to overcome the patterning trade-off of LS and CH, several approaches were demonstrated for both CAR and MOR. As for chemically amplified resist (CAR), to overcome the patterning trade-off of line and space, two different approaches were demonstrated. One was a developer rinse process optimization, and the other was a top deposition treatment during etching process. By using the two approaches, pitch 24 nm LS patterns were successfully transferred. As to CAR CH patterning, a new shrink technique during etch process was successfully tested for sub 15 nm hole patterning. No missing hole detected at 12 nm hole size by voltage contrast metrology. For tighter nodes, spin-on metal oxide resist (MOR) have been considering to be used because it offers a series of advantages. It has high sensitivity and resolution because of its high photon absorption and simple reaction mechanism. It also inherently has a higher etch resistance which enables resist thickness thinner and collapse margin higher. Spin-on process of MOR is expect to contribute high productivity which is essential for high volume manufacturing (HVM). Because defect reduction is one of the key points to enable MOR process for HVM, continuous investigation of defect mitigation has been done. For pitch 32 nm LS, the mitigation was confirmed by fine optimization with the combination of the etch process and the implementation of new under layers. As to pitch 28nm line and space, optimized illumination gave better defect process windows. Moreover, a new wet developer process was successfully proposed to prevent pitch 36 nm hexagonal pillars collapse during wet development with 25% higher EUV sensitivity.

Proceedings Article | 25 May 2022 Poster + Paper

Metal oxide resist (MOR) EUV lithography processes for DRAM application

Shinichiro Kawakami, Tomoya Onitsuka, Yuya Kamei, Satoru Shimura, Chan Ha Park, Sang Ho Lee, Hong Goo Lee, Jae Wook Seo, Jin il Kim, Jun ho Roh, Jin Hyung Kim, Ki Lyoung Lee, Seiji Nagahara, Jeoung Yun Kim, Jang Hwan Kim, Shingo Inaba, Jong Eun Park

Proceedings Volume 12055, 120550N (2022) https://doi.org/10.1117/12.2613974

KEYWORDS: Metals, Contamination, Semiconducting wafers, Optical lithography, Extreme ultraviolet lithography, Contamination control, Coating, Bridges, Manufacturing, Oxides

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Proceedings Article | 25 May 2022 Poster + Paper

Novel technologies in coater/developer to improve the defectivity for advanced EUV patterning materials

Yuya Kamei, Tomoya Onitsuka, Takashi Yamauchi, Takahiro Shiozawa, Yuhei Kuwahara, Shinichiro Kawakami, Seiji Fujimoto, Arisa Hara, Satoru Shimura

Proceedings Volume 12055, 120550O (2022) https://doi.org/10.1117/12.2613643

KEYWORDS: Particles, Bridges, Etching, Semiconducting wafers, Metals, Extreme ultraviolet, Silicon carbide, Photoresist processing, Optical lithography, Lithography

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Proceedings Article | 28 September 2021 Presentation

Addressing EUV patterning challenges towards the limits of NA 0.33 EUV exposure

Arnaud Dauendorffer, Tomoya Onitsuka, Hiroki Tadatomo, Keisuke Yoshida, Takahiro Shiozawa, Hisashi Genjima, Noriaki Nagamine, Yuya Kamei, Soichiro Okada, Shinichiro Kawakami, Makoto Muramatsu, Satoru Shimura, Kathleen Nafus, Noriaki Oikawa, Yannick Feurprier, Marc Demand, Ainhoa Romo Negreira, Seiji Nagahara, Congque Dinh, Luka Kljucar, Danilo De Simone, Philippe Foubert

Proceedings Volume 11854, 118540B (2021) https://doi.org/10.1117/12.2600860

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Metals, Etching, Stochastic processes, Semiconductors, Semiconductor manufacturing, Resistance, Photomasks, Particles

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Proceedings Article | 17 March 2021 Poster + Presentation + Paper

Novel processing technologies for advanced EUV patterning materials using metal oxide resist (MOR)

Tomoya Onitsuka, Shinichiro Kawakami, Arnaud Dauendorffer, Satoru Shimura, Kathleen Nafus, Yannick Feurprier, Philippe Foubert, Danilo De Simone

Proceedings Volume 11609, 116091L (2021) https://doi.org/10.1117/12.2583809

KEYWORDS: Extreme ultraviolet, Optical lithography, Printing, Metals, Oxides, High volume manufacturing, Extreme ultraviolet lithography, Contamination, Coating

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Proceedings Article | 22 February 2021 Presentation

Advances in defect performance in metal oxide photoresists for EUV lithography

Stephen Meyers, Jan Doise, Michael Kocsis, Shu-Hao Chang, Benjamin Clark, Peter De Schepper, Jason Stowers, Alan Telecky, Andrew Grenville, Amrit Narasimhan, Danilo De Simone, Geert Vandenberghe, Philippe Foubert, Poulomi Das, Christophe Beral, Yannick Feurprier, Tomoya Onitsuka

Proceedings Volume 11609, 116090K (2021) https://doi.org/10.1117/12.2584769

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Proceedings Article | 20 September 2020 Presentation

Improvement of EUV processes for high volume manufacturing

Makoto Muramatsu, Hiroki Tadatomo, Tomoya Onitsuka, Keisuke Yoshida, Arnaud Dauendorffer, Takahiro Shiozawa, Soichiro Okada, Shinichiro Kawakami, Satoru Shimura

Proceedings Volume 11517, 115170M (2020) https://doi.org/10.1117/12.2572637

KEYWORDS: Extreme ultraviolet, High volume manufacturing, Etching, Extreme ultraviolet lithography, Lithography, Semiconductors, Photomasks, Stochastic processes, Liquids, Photoresist processing

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Showing 5 of 11 publications

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