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The impact of image noise on the accuracy of CD extraction is explained in the section on analysis of variance (ANOVA). The variation is separated as wafer to wafer (WTW), field to field (FTF), die to die (DTD), pattern to pattern (PTP), line width roughness (LWR), and stochastic pattern noise (SPN; which is random variation per a pattern) at this ANOVA. Roughness component from image noise is included in SPN. It is possible to remove the image noise component from SPN by applying this new image analysis method, and it is also possible to discuss the SPN from shot noise of exposure tool or variation of resist material component. ANOVA can put an end to discussion of measurement length of line pattern to know the state of low frequency roughness. LWR component of long wavelength is distributed to PTP and SPN when short patterns are measured. It is important to remove image nose properly and to compare the statistical analysis processed SPN value.
Edge Placement Error (EPE) has been proposed to define the requirements of a patterning process. Many authors have created statistical models for EPE, and gathered statistical data for CD and overlay (OVL), to make predictions about future technology specifications1-5. This work makes the following contributions:
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Emphasis on large amount (63K) of on-product measurements
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Use of ANOVA table to assess the hypothesis that a contender process is better than a POR process To differentiate our work, we have used the stochastic variable IPFE (Interactive Pattern Fidelity Error), which is an indicator to quantify the quality of on-wafer edge placement accuracies in multi-patterning6. In our previous paper, we have studied how overlay, LCDU and pitch walk factor into the IPFE budget7. In this work, we focus on experimental verification of the expected relationships between LCDU, overlay and CD variation, applied to the case of SADP (block on spacer):
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We re-confirm that population ‘blocks-on-gap’ have a worse IPFE performance than ‘block-on-core’
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We determine experimental behavior of IPFE vs line CD, block CD, and overlay (w/o assumption for any model) From this exercise, we can conclude that this IPFE indicator is a robust metric for the managing quality of any integrated patterning scheme.
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