Rigorous 3D probabilistic computational lithography and chip-level inspection for EUV stochastic failure detection

Eunju Kim; Wooseok Kim; Jonggwan Lee; Seongjong Kim; Sukyong Lee; Nohong Kwak; Mincheol Kang; Yongchul Jeong; Myungsoo Hwang; Chang-Min Park; Kyoil Koo; Seongtae Jeong; John Biafore; Mark Smith; Trey Graves; Anatoly Burov; Pradeep Vukkadala; Guy Parsey; Cao Zhang; Kunlun Bai; Janez Krek; Craig Higgins; Sergei Bakarian; Kyeongeun Ko; Roel Gronheid; Kaushik Sah; Andrew Cross; Yi Liu; Alessandro Vaglio Pret; Chris Walker; Vikram Tolani; George Hwa; Peter Hu; Chang Song; Alex Arkhipov; Loemba Bouckou; Chi-Ping Liu; Xiaochun Yang; Kana O'Hara; Donghwan Son

doi:10.1117/12.2687373

21 November 2023 Rigorous 3D probabilistic computational lithography and chip-level inspection for EUV stochastic failure detection

Eunju Kim, Wooseok Kim, Jonggwan Lee, Seongjong Kim, Sukyong Lee, Nohong Kwak, Mincheol Kang, Yongchul Jeong, Myungsoo Hwang, Chang-Min Park, Kyoil Koo, Seongtae Jeong, John Biafore, Mark Smith, Trey Graves, Anatoly Burov, Pradeep Vukkadala, Guy Parsey, Cao Zhang, Kunlun Bai, Janez Krek, Craig Higgins, Sergei Bakarian, Kyeongeun Ko, Roel Gronheid, Kaushik Sah, Andrew Cross, Yi Liu, Alessandro Vaglio Pret, Chris Walker, Vikram Tolani, George Hwa, Peter Hu, Chang Song, Alex Arkhipov, Loemba Bouckou, Chi-Ping Liu, Xiaochun Yang, Kana O'Hara, Donghwan Son

Author Affiliations +

Proceedings Volume 12750, International Conference on Extreme Ultraviolet Lithography 2023; 127500C (2023) https://doi.org/10.1117/12.2687373
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Abstract

Background: Natural physical phenomena occurring at length scales of a few nm produces variation in many aspects of the EUV photoresist relief image: edge roughness, width roughness, feature-tofeature variability, etc. 1,2,3,4. But the most damaging of these variations are stochastic or probabilistic printing failures 5, 6. Stochastic or probabilistic failures are highly random with respect to count and location and occur on wafers at spectra of unknown frequencies. Examples of these are space bridging, line breaking, missing and merging holes. Each has potential to damage or destroy the device, reducing yield 6, 10. Each has potential to damage or destroy the device, reducing yield 6, 10. The phenomena likely originates during exposure where quantized light and matter interact1 . EUV lithography is especially problematic since the uncertainty of energy absorbed by a volume of resist is much greater at 13.5 nm vs. 248 nm and 193 nm. Methods: In this paper, we use highly accelerated rigorous 3D probabilistic computational lithography and inspection to scan an entire EUV advanced node layout, predicting the location, type and probability of stochastic printing failures.

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(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Eunju Kim, Wooseok Kim, Jonggwan Lee, Seongjong Kim, Sukyong Lee, Nohong Kwak, Mincheol Kang, Yongchul Jeong, Myungsoo Hwang, Chang-Min Park, Kyoil Koo, Seongtae Jeong, John Biafore, Mark Smith, Trey Graves, Anatoly Burov, Pradeep Vukkadala, Guy Parsey, Cao Zhang, Kunlun Bai, Janez Krek, Craig Higgins, Sergei Bakarian, Kyeongeun Ko, Roel Gronheid, Kaushik Sah, Andrew Cross, Yi Liu, Alessandro Vaglio Pret, Chris Walker, Vikram Tolani, George Hwa, Peter Hu, Chang Song, Alex Arkhipov, Loemba Bouckou, Chi-Ping Liu, Xiaochun Yang, Kana O'Hara, and Donghwan Son "Rigorous 3D probabilistic computational lithography and chip-level inspection for EUV stochastic failure detection", Proc. SPIE 12750, International Conference on Extreme Ultraviolet Lithography 2023, 127500C (21 November 2023); https://doi.org/10.1117/12.2687373

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