Improved measurement capabilities at the NIST EUV reflectometry facility

C. Tarrio; S. Grantham; T. A. Germer; J. Rife; T. B. Lucatorto; M. Kriese; Y. Platonov; L. Jiang; J. Rodriguez

doi:10.1117/12.2046290

17 April 2014 Improved measurement capabilities at the NIST EUV reflectometry facility

C. Tarrio, S. Grantham, T. A. Germer, J. Rife, T. B. Lucatorto, M. Kriese, Y. Platonov, L. Jiang, J. Rodriguez

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90481I (2014) https://doi.org/10.1117/12.2046290
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

The NIST Extreme Ultraviolet (EUV) Reflectometry Facility was designed in the 1990s to accommodate the largest multilayer optics envisioned at that time. However, with increasing power requirements for an EUV scanner, source collection optics have grown larger and more steeply curved than the original design would allow. To accommodate these changes, the mechanical and operational parameters of the facility have been upgraded. To access the entire surface of a larger optic, an auxiliary off-axis rotation stage has been installed allowing an increase in maximum optic size from 350 mm to 450 mm. Likewise, to deal with the deeper sags and steeper slopes of these optics, we have had to significantly expand our data analysis capabilities. In order to make these measurements, the incident radiation is reflected out of the vertical plane, allowing for measurements of effectively unpolarized radiation, an advantage for EUV lithography optics such as source collectors.

Citation Download Citation

C. Tarrio, S. Grantham, T. A. Germer, J. Rife, T. B. Lucatorto, M. Kriese, Y. Platonov, L. Jiang, and J. Rodriguez "Improved measurement capabilities at the NIST EUV reflectometry facility", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481I (17 April 2014); https://doi.org/10.1117/12.2046290

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