Presentation
10 April 2024 Controlling patterning uniformity in thick resist lithography
Author Affiliations +
Abstract
3-dimensional chiplet device architectures are expected to provide improved device performance, efficiency, and footprint beyond what is capable with 2-dimensional scaling technologies. Thick resist lithography of damascene and plating resists, as well as organic dielectric materials, plays a critical role in chiplet integration. However, thick resist lithography requires viscous resist solutions, specialized tooling, and long processing times. This makes patterning using these resists inherently prone to uniformity issues, which has become a crucial issue for scaling. This work highlights two strategic areas of thick resist patterning development: improved resist coating methods; and enhanced focus control during exposure. Herein, we show a track-based method for carefully controlled uniformity of the resist coating thickness, with some sacrifice of through-put. In addition, we show stepper-based focus methods to account for die level variations in resist and wafer thickness, as well as local topography. Combined, these provide precise cross-wafer control of thick resist dimensions.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher M. Bottoms, Alexander Hamer, Alejandro Mejia, Alex Hubbard, Nicholas Latham, Katherine Sieg, Jennifer Fullam, Vinay Pai, Junwon Han, Juan-Manuel Gomez, Christopher Waskiewicz, and Shahid Butt "Controlling patterning uniformity in thick resist lithography", Proc. SPIE PC12956, Novel Patterning Technologies 2024, PC129560E (10 April 2024); https://doi.org/10.1117/12.3012541
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KEYWORDS
Lithography

Optical lithography

Coating thickness

Coating

Dielectrics

Photoresist processing

Plating

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