Dr. Erik R. Hosler Profile

Dr. Erik R. Hosler

SPIE Involvement:

Editorial Board Member: Journal of Micro/Nanopatterning, Materials, and Metrology | Editorial Board Member: Journal of Micro/Nanolithography, MEMS, and MOEMS | Author

Area of Expertise:

Lithography , EUV Source , Free-electron lasers , EUV Metrology , Mask Inspection , Cost of Ownership

Publications (21)

SPIE Journal Paper | 28 June 2022 Open Access

Open Access

Special Section Guest Editorial: Next Generation Light Source, Materials, and Metrology/Inspection Equipment

Erik Hosler, Brennan Peterson

JM3, Vol. 21, Issue 02, 021201, (June 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.021201

KEYWORDS: Metrology, Light sources, Inspection, Extreme ultraviolet, Extreme ultraviolet lithography, Electron beam lithography, 3D metrology, Semiconductors, Optical metrology, Lithography

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Proceedings Article | 13 June 2022 Presentation

Presentation

Bringing manufacturing to quantum computing: the path to a million qubits

Erik Hosler

Proceedings Volume PC12056, PC1205607 (2022) https://doi.org/10.1117/12.2615252

KEYWORDS: Quantum communications, Quantum computing, Manufacturing, Silicon photonics, Optical lithography, Nanolithography, High volume manufacturing, Ecosystems

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Proceedings Article | 9 June 2022 Presentation

Presentation

The path to a useful quantum computer

Erik Hosler

Proceedings Volume PC12053, PC1205303 (2022) https://doi.org/10.1117/12.2624097

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Proceedings Article | 27 September 2021 Presentation

Presentation

Bringing manufacturing to quantum computing: the path to a million qubits

Erik Hosler

Proceedings Volume 11854, 1185402 (2021) https://doi.org/10.1117/12.2612582

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Proceedings Article | 28 April 2020 Open Access

Open Access

Presentation

Intersecting the Quantum Future and the Semiconductor Industry (Conference Presentation)

Bryan Barnes, Erik Hosler, R. Joseph Kline

Proceedings Volume 11323, 113232N (2020) https://doi.org/10.1117/12.2572270

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SPIE Journal Paper | 30 October 2017

Free-electron laser emission architecture impact on extreme ultraviolet lithography

Erik Hosler, Obert Wood, William Barletta

JM3, Vol. 16, Issue 04, 041009, (October 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041009

KEYWORDS: Free electron lasers, Extreme ultraviolet lithography, Electron beams, Extreme ultraviolet, Electrons, Lithography, Monochromators, Light sources, Scanners, Optical resonators

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Proceedings Article | 16 October 2017 Presentation

Presentation

Next-generation EUV lithography productivity (Conference Presentation)

Erik Hosler

Proceedings Volume 10450, 104500X (2017) https://doi.org/10.1117/12.2282183

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Photomasks, High volume manufacturing, Double patterning technology, Scanners, EUV optics

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Proceedings Article | 31 March 2017 Presentation + Paper

Presentation + Paper

Free-electron laser emission architecture impact on EUV lithography

Erik Hosler, Obert Wood, William Barletta

Proceedings Volume 10143, 101431M (2017) https://doi.org/10.1117/12.2260452

KEYWORDS: Free electron lasers, Extreme ultraviolet lithography, Extreme ultraviolet, Amplifiers, Laser applications, Plasma, Manufacturing, Imaging systems, Semiconducting wafers, Electron beams, Electrons, Lithography, Monochromators, Light sources, Scanners, Optical resonators

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Mix-and-match considerations for EUV insertion in N7 HVM

Xuemei Chen, Allen Gabor, Pavan Samudrala, Sheldon Meyers, Erik Hosler, Richard Johnson, Nelson Felix

Proceedings Volume 10143, 101430F (2017) https://doi.org/10.1117/12.2258674

KEYWORDS: Extreme ultraviolet, Overlay metrology, Extreme ultraviolet lithography, Distortion, Control systems, Scanners, Imaging systems, Photomasks, Systems modeling, Error analysis, Semiconducting wafers, Reticles, Metrology

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Proceedings Article | 24 March 2016 Paper

Paper

LER improvement for sub-32nm pitch self-aligned quadruple patterning (SAQP) at back end of line (BEOL)

Nihar Mohanty, Richard Farrell, Cheryl Periera, Kal Subhadeep, Elliott Franke, Jeffrey Smith, Akiteru Ko, Anton DeVilliers, Peter Biolsi, Lei Sun, Genevieve Beique, Erik Hosler, Erik Verdujn, Wenhui Wang, Cathy Labelle, Ryoung-han Kim

Proceedings Volume 9782, 97820Q (2016) https://doi.org/10.1117/12.2219259

KEYWORDS: Etching, Line edge roughness, Optical lithography, Back end of line, Chemistry, Front end of line, Lithography, Ions, Amorphous silicon, Extreme ultraviolet

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Proceedings Article | 18 March 2016 Paper

Paper

EUV and optical lithographic pattern shift at the 5nm node

Erik Hosler, Sathish Thiruvengadam, Jason Cantone, Deniz Civay, Uwe Schroeder

Proceedings Volume 9776, 977616 (2016) https://doi.org/10.1117/12.2217532

KEYWORDS: Extreme ultraviolet, Optical lithography, Photomasks, Monte Carlo methods, Extreme ultraviolet lithography, Lithography, Personal protective equipment, Critical dimension metrology, EUV optics, Transistors

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SPIE Journal Paper | 14 March 2016

Optical critical dimension metrology for directed self-assembly assisted contact hole shrink

Dhairya Dixit, Avery Green, Erik Hosler, Vimal Kamineni, Moshe Preil, Nick Keller, Joseph Race, Jun Sung Chun, Michael O’Sullivan, Prasanna Khare, Warren Montgomery, Alain Diebold

JM3, Vol. 15, Issue 01, 014004, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.1.014004

KEYWORDS: Directed self assembly, Critical dimension metrology, Scatterometry, Polymethylmethacrylate, Optical components, Picosecond phenomena, Optical simulations, Chemical elements, Optical lithography, Ellipsometry

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SPIE Journal Paper | 3 August 2015 Open Access

Open Access

Sensitivity analysis and line edge roughness determination of 28-nm pitch silicon fins using Mueller matrix spectroscopic ellipsometry-based optical critical dimension metrology

Dhairya Dixit, Samuel O’Mullane, Sravan Sunkoju, Abhishek Gottipati, Erik Hosler, Vimal Kamineni, Moshe Preil, Nick Keller, Joseph Race, Gangadhara Raja Muthinti, Alain Diebold

JM3, Vol. 14, Issue 03, 031208, (August 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.3.031208

KEYWORDS: Line edge roughness, Silicon, Scatterometry, Data modeling, Optical components, Scanning electron microscopy, Picosecond phenomena, Chemical elements, Line width roughness, Optical properties

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SPIE Journal Paper | 10 April 2015 Open Access

Open Access

Metrology for block copolymer directed self-assembly structures using Mueller matrix-based scatterometry

Dhairya Dixit, Vimal Kamineni, Richard Farrell, Erik Hosler, Moshe Preil, Joseph Race, Brennan Peterson, Alain Diebold

JM3, Vol. 14, Issue 02, 021102, (April 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.021102

KEYWORDS: Silicon, Picosecond phenomena, Scatterometry, Anisotropy, Semiconducting wafers, Data modeling, Metrology, Optical lithography, Chemical elements, Directed self assembly

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Proceedings Article | 10 April 2015 Paper

Paper

Silicon fin line edge roughness determination and sensitivity analysis by Mueller matrix spectroscopic ellipsometry based scatterometry

Dhairya Dixit, Samuel O'Mullane, Sravan Sunkoju, Erik Hosler, Vimal Kamineni, Moshe Preil, Nick Keller, Joseph Race, Gangadhara Raja Muthinti, Alain Diebold

Proceedings Volume 9424, 94242P (2015) https://doi.org/10.1117/12.2185543

KEYWORDS: Line edge roughness, Silicon, Scatterometry, Data modeling, Optical components, Spatial frequencies, Chemical elements, Optical properties, Inverse optics, Critical dimension metrology

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Proceedings Article | 19 March 2015 Paper

Paper

Optical CD metrology for directed self-assembly assisted contact hole shrink process

Dhairya Dixit, Erik Hosler, Moshe Preil, Nick Keller, Joseph Race, Jun Sung Chun, Michael O’Sullivan, M. Warren Montgomery, Alain Diebold

Proceedings Volume 9424, 94240T (2015) https://doi.org/10.1117/12.2085054

KEYWORDS: Scatterometry, Polymethylmethacrylate, Critical dimension metrology, Optical components, Chemical elements, Optical simulations, Inverse optics, Ellipsometry, Optical lithography, Directed self assembly

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Proceedings Article | 16 March 2015 Paper

Paper

EUV telecentricity and shadowing errors impact on process margins

D. Civay, E. Hosler, V. Chauhan, T. Guha Neogi, L. Smith, D. Pritchard

Proceedings Volume 9422, 94220Z (2015) https://doi.org/10.1117/12.2087639

KEYWORDS: Monte Carlo methods, Photomasks, Personal protective equipment, Extreme ultraviolet, Metals, Extreme ultraviolet lithography, Semiconducting wafers, Lithography, Reflectivity, Reliability

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Proceedings Article | 13 March 2015 Paper

Paper

Considerations for a free-electron laser-based extreme-ultraviolet lithography program

Erik Hosler, Obert Wood, William Barletta, Pawitter Mangat, Moshe Preil

Proceedings Volume 9422, 94220D (2015) https://doi.org/10.1117/12.2085538

KEYWORDS: Free electron lasers, Extreme ultraviolet lithography, Extreme ultraviolet, Electron beams, Lithography, Scanners, Prototyping, Light sources, Cryogenics, X-rays

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Proceedings Article | 2 April 2014 Paper

Paper

Metrology for directed self-assembly block lithography using optical scatterometry

Dhairya Dixit, Vimal Kamineni, Richard Farrell, Erik Hosler, Moshe Preil, Joseph Race, Brennan Peterson, Alain Diebold

Proceedings Volume 9050, 90500N (2014) https://doi.org/10.1117/12.2047111

KEYWORDS: Scatterometry, Anisotropy, Metrology, Chemical elements, Picosecond phenomena, 3D modeling, Data modeling, Optical lithography, Optical properties, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Paper

Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond

Nihar Mohanty, Akiteru Ko, Christopher Cole, Vinayak Rastogi, Kaushik Kumar, Gerard Schmid, Richard Farrell, Todd Ryan, Erik Hosler, Ji Xu, Moshe Preil

Proceedings Volume 9054, 90540R (2014) https://doi.org/10.1117/12.2048320

KEYWORDS: Etching, Optical lithography, Plasma, Semiconducting wafers, Double patterning technology, Lithography, Photons, Back end of line, Metals, Directed self assembly

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Proceedings Article | 27 March 2014 Paper

Paper

Manufacturability considerations for DSA

Richard Farrell, Erik Hosler, Gerard Schmid, Ji Xu, Moshe Preil, Vinayak Rastogi, Nihar Mohanty, Kaushik Kumar, Michael Cicoria, David Hetzer, Anton DeVilliers

Proceedings Volume 9051, 90510Z (2014) https://doi.org/10.1117/12.2048396

KEYWORDS: Polymethylmethacrylate, Optical lithography, Photoresist materials, Line edge roughness, Etching, Line width roughness, Picosecond phenomena, Scanning electron microscopy, Annealing, Directed self assembly

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Showing 5 of 21 publications

Conference Committee Involvement (6)

Novel Patterning Technologies 2023

27 February 2023 | San Jose, California, United States

Novel Patterning Technologies 2022

25 April 2022 | San Jose, California, United States

Novel Patterning Technologies 2021

22 February 2021 | Online Only, California, United States

Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020

24 February 2020 | San Jose, California, United States

Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2019

25 February 2019 | San Jose, California, United States

Showing 5 of 6 Conference Committees

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