Dr. Innokenty I. Novikov Profile

Dr. Innokenty I. Novikov

at Ioffe Institute

SPIE Involvement:

Author

Publications (25)

Proceedings Article | 13 March 2024 Presentation + Paper

Presentation + Paper

High-speed MBE-grown 1550 nm wafer-fused VCSELs

Georgiy Sapunov, Si-Cong Tian, Sergey Blokhin, Iakov Kovach, Denis Papylev, Stanislav Rochas, Vladislav Andryushkin, Evgenii Kolodeznyi, Andrey Babichev, Andrey Gladyshev, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Nikolay Maleev, Kirill Voropaev, Victor Ustinov, Mansoor Ahamed, Konstantin Shugurov, Anton Egorov, Leonid Karachinsky, Dieter Bimberg

Proceedings Volume 12904, 129040K (2024) https://doi.org/10.1117/12.3000473

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Semiconducting wafers, Indium gallium arsenide, Temperature metrology, Quantum wells, Heterojunctions, Design, Relative intensity noise

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SPIE Journal Paper | 20 September 2022

20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region

Sergei Blokhin, Andrey Babichev, Andrey Gladyshev, Innokenty Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay Maleev, Vladislav Andryushkin, Dmitrii Denisov, Kirill Voropaev, Victor Ustinov, Vladislav E. Bougrov, Anton Egorov, Leonid Karachinsky

OE, Vol. 61, Issue 09, 096109, (September 2022) https://doi.org/10.1117/12.10.1117/1.OE.61.9.096109

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Gallium, Quantum wells, Single mode fibers, Temperature metrology, Aluminum, Wafer-level optics, Optical engineering, Eye

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Proceedings Article | 3 March 2022 Presentation + Paper

Presentation + Paper

1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region

Sergey Blokhin, Nikolay Ledentsov, Stanislav Rochas, Andrey Babichev, Andrey Gladyshev, Łukasz Chorchos, Oleg Yu. Makarov, Leonid Ya. Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Nikolay Maleev, Vladislav Andryushkin, Kirill Voropaev, Irina Zhumaeva, Victor Ustinov, Anton Yu. Egorov

Proceedings Volume 12020, 120200K (2022) https://doi.org/10.1117/12.2605451

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Quantum wells, Internal quantum efficiency, Absorption, Mirrors, Epitaxy, Transparency, Single mode fibers, Semiconducting wafers

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Proceedings Article | 25 February 2017 Paper

Paper

Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

A. Babichev, L. Ya. Karachinsky, I. Novikov, A. Gladyshev, S. Mikhailov, V. Iakovlev, A. Sirbu, G. Stepniak, L. Chorchos, J. Turkiewicz, M. Agustin, N. Ledentsov, K. Voropaev, A. Ionov, A. Yu. Egorov

Proceedings Volume 10122, 1012208 (2017) https://doi.org/10.1117/12.2250842

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Continuous wave operation, Fiber to the x, Quantum wells, Eye, Wafer-level optics, Gallium, Photodetectors, Aluminum

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Proceedings Article | 22 February 2017 Paper

Paper

Lasing of metamorphic hybrid 1300nm spectral band VCSEL under optical pumping up to 120 C

N. Kryzhanovskaya, E. Moiseev, A. Gladyshev, L. Ya. Karachinsky, I. Novikov, A. Babichev, S. Blokhin, M. Bobrov, Yu. Zadiranov, S. Troshkov, A. Yu. Egorov

Proceedings Volume 10098, 1009811 (2017) https://doi.org/10.1117/12.2250542

KEYWORDS: Vertical cavity surface emitting lasers, Optical pumping, Heterojunctions, Quantum wells, Gallium arsenide, Tantalum, Dielectrics, Gallium, Semiconductors, Sputter deposition

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Proceedings Article | 16 March 2015 Paper

Paper

Impact of the carrier relaxation paths on two-state operation in quantum dot lasers

G. Sokolovskii, V. Dudelev, E. Kolykhalova, Ksenya Soboleva, A. Deryagin, Innokenty Novikov, Mikhail Maximov, A. Zhukov, V. Ustinov, V. Kuchinskii, W. Sibbett, E. Rafailov, Evgeny Viktorov, T. Erneux

Proceedings Volume 9357, 93570K (2015) https://doi.org/10.1117/12.2078746

KEYWORDS: Pulsed laser operation, Quantum dot lasers, Lithium, Indium gallium arsenide, Semiconductor lasers, Indium arsenide, Quantum dots, Electrons, Continuous wave operation, High power lasers

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Proceedings Article | 2 May 2014 Paper

Paper

The effect of slow passage in the pulse-pumped quantum dot laser

G. Sokolovskii, M. Abu Saa, J. Danckaert, V. Dudelev, A. Deryagin, I. Novikov, M. Maximov, A. Zhukov, V. Ustinov, V. Kuchinskii, W. Sibbett, E. Rafailov, Evgeny Viktorov, T. Erneux

Proceedings Volume 9134, 913405 (2014) https://doi.org/10.1117/12.2051899

KEYWORDS: Semiconductor lasers, Pulsed laser operation, High power lasers, Quantum dot lasers, Laser damage threshold, Pulse shaping, Physics, Shape analysis, Quantum dots, Gallium arsenide

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Proceedings Article | 7 February 2012 Paper

Paper

Progress on single mode VCSELs for data- and tele-communications

Nikolay Ledentsov, James Lott, Jörg-R. Kropp, Vitaly Shchukin, Dieter Bimberg, Philip Moser, Gerrit Fiol, Alexey Payusov, Denis Molin, Gerard Kuyt, Adrian Amezcua, Leonid Karachinsky, Sergey Blokhin, Innokenty Novikov, Nikolay Maleev, Christoph Caspar, Ronald Freund

Proceedings Volume 8276, 82760K (2012) https://doi.org/10.1117/12.902643

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Data transmission, Multimode fibers, Reliability, Standards development, Temperature metrology, Optical interconnects, Data communications, Oxides

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Proceedings Article | 28 November 2011 Paper

Paper

850 nm optical components for 25 Gb/s optical fiber data communication links over 100 m at 85°C

S. Blokhin, J. Lott, N. Ledentsov, L. Karachinsky, A. Kuzmenkov, I. Novikov, N. Maleev, G. Fiol, D. Bimberg

Proceedings Volume 8308, 830819 (2011) https://doi.org/10.1117/12.904604

KEYWORDS: Vertical cavity surface emitting lasers, Palladium, Modulation, Eye, Optical fibers, Capacitance, Oxides, Multimode fibers, Fiber optic communications, Data communications

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Proceedings Article | 8 February 2011 Paper

Paper

High-speed single-mode quantum dot and quantum well VCSELs

Nikolay Ledentsov, James Lott, Dieter Bimberg, Alex Mutig, Gerrit Fiol, Sergey Blokhin, Alexey Nadtochiy, Vitaly Shchukin, Jörg Kropp, Innokenty Novikov, Leonid Karachinsky, Mikhail Maximov

Proceedings Volume 7952, 79520J (2011) https://doi.org/10.1117/12.880404

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Quantum dots, Eye, Modulation, Optical fibers, Multimode fibers, Oxides, Receivers, Luminescence

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Proceedings Article | 26 February 2010 Paper

Paper

Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers

Vitaly Shchukin, Nikolai Ledentsov, Vladimir Kalosha, Thorsten Kettler, Kristijan Posilovic, Daniel Seidlitz, Dieter Bimberg, Nikita Yu. Gordeev, Leonid Ya. Karachinsky, Innokenty Novikov, Yuri Shernyakov, Alena Chunareva, Mikhail Maximov

Proceedings Volume 7597, 75971A (2010) https://doi.org/10.1117/12.847040

KEYWORDS: Waveguides, Semiconductor lasers, Photonic crystals, Active optics, Cladding, Near field, Near field optics, High power lasers, Crystals, Phase matching

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Proceedings Article | 12 February 2010 Paper

Paper

High-power high-brightness semiconductor lasers based on novel waveguide concepts

Dieter Bimberg, Kristijan Posilovic, Vladimir Kalosha, Thorsten Kettler, Daniel Seidlitz, Vitaly Shchukin, Nikolay Ledentsov, Nikita Gordeev, Leonid Karachinsky, Innokenty Novikov, Mikhail Maximov, Yuri Shernyakov, Alena Chunareva, Frank Bugge, Markus Weyers

Proceedings Volume 7616, 76161I (2010) https://doi.org/10.1117/12.846577

KEYWORDS: Waveguides, Refractive index, Semiconductor lasers, Continuous wave operation, Photonic crystals, Waveguide lasers, Cladding, High power lasers, Laser crystals

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Proceedings Article | 24 February 2009 Paper

Paper

20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

J. Lott, V. Shchukin, N. Ledentsov, A. Stinz, F. Hopfer, A. Mutig, G. Fiol, D. Bimberg, S. Blokhin, L. Karachinsky, I. Novikov, M. Maximov, N. Zakharov, P. Werner

Proceedings Volume 7211, 721114 (2009) https://doi.org/10.1117/12.816947

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, Quantum wells, Indium arsenide, Gallium arsenide, Quantum dots, Optical microcavities, Telecommunications, Modulation, Indium gallium arsenide

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Proceedings Article | 18 February 2009 Paper

Paper

Quantum dot insertions in VCSELs from 840 to 1300 nm: growth, characterization, and device performance

N. Ledentsov, J. Lott, V. Shchukin, H. Quast, F. Hopfer, G. Fiol, A. Mutig, P. Moser, T. Germann, A. Strittmatter, L. Karachinsky, S. Blokhin, I. Novikov, A. Nadtochi, N. Zakharov, P. Werner, D. Bimberg

Proceedings Volume 7224, 72240P (2009) https://doi.org/10.1117/12.810192

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Indium arsenide, Eye, Quantum dots, Transmission electron microscopy, Frequency conversion, Multimode fibers, Copper

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Proceedings Article | 18 November 2008 Paper

Paper

Tilted cavity concept for the high-power wavelength stabilized diode lasers

L. Ya. Karachinsky, I. Novikov, G. Fiol, M. Kuntz, Yu. Shernyakov, N. Yu. Gordeev, M. Maximov, M. Lifshits, T. Kettler, K. Posilovic, V. Shchukin, N. Ledentsov, S. Mikhrin, D. Bimberg

Proceedings Volume 7138, 713804 (2008) https://doi.org/10.1117/12.817968

KEYWORDS: Pulsed laser operation, Semiconductor lasers, Continuous wave operation, Modulation, High power lasers, Reflectivity, Laser stabilization, Vertical cavity surface emitting lasers, Gallium arsenide, Temperature metrology

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Proceedings Article | 12 July 2006 Paper

Paper

High brilliance photonic band crystal lasers

V. Shchukin, N. Ledentsov, N. Gordeev, L. Karachinsky, N. Kryzhanovskaya, S. Kuznetsov, M. Lifshits, M. Maximov, I. Novikov, Yu. Shernyakov, T. Kettler, K. Posilovic, D. Bimberg

Proceedings Volume 6350, 635005 (2006) https://doi.org/10.1117/12.693348

KEYWORDS: Photonic crystals, Laser crystals, Waveguides, Semiconductor lasers, Refractive index, Crystals, Reflectivity, High power lasers, Gallium arsenide, Near field optics

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Proceedings Article | 28 February 2006 Paper

Paper

Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence

M. Maximov, Yu. Shernyakov, I. Novikov, S. Kuznetsov, L. Ya. Karachinsky, N. Yu. Gordeev, I. Soshnikov, Yu. Musikhin, N. Kryzhanovskaya, A. Sharon, U. Ben-Ami, V. Kalosha, N. Zakharov, P. Werner, T. Kettler, K. Posilovic, V. Shchukin, N. Ledentsov, D. Bimberg

Proceedings Volume 6115, 611513 (2006) https://doi.org/10.1117/12.661389

KEYWORDS: Waveguides, Photonic crystals, Semiconductor lasers, Refractive index, Crystals, Laser crystals, Light emitting diodes, Geometrical optics, Near field optics, Cladding

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Proceedings Article | 22 February 2006 Paper

Paper

1.3-1.5 µm quantum dot lasers on foreign substrates: growth using defect reduction technique, high-power CW operation, and degradation resistance

N. Ledentsov, A. Kovsh, V. Shchukin, S. Mikhrin, I. Krestnikov, A. Kozhukhov, L. Karachinsky, M. Maximov, I. Novikov, Yu. Shernyakov, I. Soshnikov, A. Zhukov, Yu. Musikhin, V. Ustinov, N. Zakharov, P. Werner, T. Kettler, K. Posilovic, D. Bimberg, M. Hu, H. Nguyen, K. Song, Chung-en Zah

Proceedings Volume 6133, 61330S (2006) https://doi.org/10.1117/12.641483

KEYWORDS: Gallium arsenide, Continuous wave operation, Semiconductor lasers, Quantum wells, Quantum dots, Indium arsenide, Indium gallium arsenide, Laser stabilization, High power lasers

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We have performed a systematic study of structural and optical properties of Quantum dot (QDs) lasers based on InAs/InGaAs quantum dots grown on GaAs substrates emitting in the 1.3 - 1.5 μm range. 1.3 μm range QD lasers are grown using GaAs as matrix material. It is shown that the lasers, grown with large number of QD stacks are metamorphic, with plastic relaxation occurring through the formation of misfit dislocations. Thus, 1.3 μm QD lasers with large number of stacks grown without strain compensation are metamorphic. Another type of defects is related to local dislocated clusters, which are the most dangerous. When proper optimization of the growth conditions is carried out, including a selective thermal etching off of statistically formed dislocated clusters through the defect-reduction technique (DRT), no significant impact of misfit dislocations on the degradation robustness is observed. In uncoated devices a high cw single mode power of ~700 mW is realized limited by thermal roll-over, which is not affected by 500 h ageing at room temperature. At elevated temperatures the main degradation mechanism revealed is catastrophic optical mirror damage (COMD). When the facet are passivated, the devices show the extrapolated operation lifetime in excess of 10⁶ h at 40°C at ~100 mW cw single mode output power. Longer wavelength (1.4 - 1.5 μm) devices are grown on metamorphic (In,Ga,Al)As layers deposited on GaAs substrates. In this case, the plastic relaxation occurs through formation of both misfit and threading dislocations. The latter kill the device performance. Using DRT in this case enables blocking of threading dislocation with growth of QDs in defect-free upper layers. DRT is realized by selective capping of the defect-free areas and high-temperature etching of nano-holes at the non-capped regions near the dislocation. The procedure results in etching of holes and is followed by fast lateral overgrowth with merger of the growth fronts. If the defect does not propagate into the upper layer when the hole is capped, the upper layers become defect-free. Lasers based on this approach exhibited emission wavelength in the 1.4 -1.5 μm range with a differential quantum efficiency of about ~50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm^-2 without degradation. A maximum continuous-wave output power of 220 mW limited by thermal roll-over is obtained. No beam filamentation was observed up to the highest pumping levels. Narrow stripe devices with as-cleaved facets are tested for 60°C (800 h) and 70°C (200 h) on-chip temperature. No noticeable degradation has been observed at 50 mW cw single mode output power. This shows the possibility of degradation-robust devices on foreign substrates. The technology opens a way for integration of various III-V materials and may target degradation-free lasers on silicon for further convergence of computing and communications.

Proceedings Article | 28 April 2005 Paper

Paper

Edge and surface-emitting tilted cavity lasers

N. Ledentsov, V. Shchukin, A. Kovsh, S. Mikhrin, I. Krestnikov, A. Kozhukhov, N. Gordeev, L. Karachinsky, M. Maximov, I. Novikov, Yu. Shernyakov

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.601953

KEYWORDS: Refractive index, Reflectivity, Gallium arsenide, Quantum wells, Semiconductor lasers, Waveguides, Vertical cavity surface emitting lasers, Electroluminescence, Near field, Reflection

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Proceedings Article | 31 January 2005 Paper

Paper

QD lasers: physics and applications

Nikolai Ledentsov, Alexey Kovsh, Vitaly Shchukin, Sergey Mikhrin, Igor Krestnikov, A. Kozhukhov, Leonid Karachinsky, Mikhail Maximov, Innokenty Novikov, Yuri Shernyakov, Ilja Soshnikov, Alexey Zhukov, Efim Portnoi, Victor Ustinov, D. Gerthsen, Pallab Bhattacharya, N. Zakharov, P. Werner, Friedhelm Hopfer, Matthias Kuntz, Dieter Bimberg

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.570284

KEYWORDS: Gallium arsenide, Semiconductor lasers, Vertical cavity surface emitting lasers, Indium arsenide, Annealing, Quantum dots, Laser stabilization, Transmission electron microscopy, Heterojunctions, Indium gallium arsenide

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Proceedings Article | 2 August 2004 Paper

Paper

Tilted cavity laser (Critical Review Lecture)

Vitaly Shchukin, Nikolai Ledentsov, S. Mikhrin, I. Krestnikov, A. Kozhukhov, Alexey Kovsh, Leonid Karachinsky, Mikhail Maximov, Innokenty Novikov, Yuri Shernyakov

Proceedings Volume 5509, (2004) https://doi.org/10.1117/12.562390

KEYWORDS: Reflectivity, Semiconductor lasers, Electroluminescence, Quantum wells, Refractive index, Gallium arsenide, Quantum dots, Reflectors, Laser stabilization, Temperature metrology

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Proceedings Article | 8 July 2003 Paper

Paper

Superradiance as a transition phase from spontaneous to stimulated emission in low-dimensional semiconductor heterostructures

Leonid Karachinsky, Nikita Gordeev, Innokenty Novikov, Georgy Zegrya

Proceedings Volume 5036, (2003) https://doi.org/10.1117/12.498374

KEYWORDS: Heterojunctions, Quantum wells, Semiconductors, Dielectrics, Electromagnetism, Semiconductor lasers, Dielectric polarization, Transition metals, Plasma, Picosecond phenomena

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Proceedings Article | 8 July 2003 Paper

Paper

Two-photon absorption in InGaAsP waveguides

Leonid Karachinsky, Nikita Gordeev, Innokenty Novikov, Andrei Lyutetskiy, Nikita Pikhtin, Natalia Fetisova, Ilya Tarasov, Petr Kop'ev

Proceedings Volume 5036, (2003) https://doi.org/10.1117/12.498647

KEYWORDS: Waveguides, Absorption, Semiconductors, Photodetectors, Nonlinear response, Semiconductor lasers, Quantum wells, Heterojunctions, Photons, Sensors

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Proceedings Article | 8 July 2003 Paper

Paper

Peculiarities of electroluminescence of quantum dot laser heterostructures

Innokenty Novikov, Leonid Karachinsky, Petr Kop'ev, Victor Ustinov, Sergey Zaitsev, Nikita Gordeev

Proceedings Volume 5036, (2003) https://doi.org/10.1117/12.498248

KEYWORDS: Heterojunctions, Quantum dots, Electroluminescence, Temperature metrology, Quantum dot lasers, Switches, Gallium arsenide, Molecular beam epitaxy, Cladding, GRIN lenses

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Proceedings Article | 29 December 1999 Paper

Paper

Collective resonance and form factor of homogeneous broadening in semiconductors

Leonid Karachinsky, Nikita Gordeev, Vladimir Kopchatov, Petr Kop'ev, Innokenty Novikov, Nikita Pikhtin, Ilya Tarasov, Sergey Zaitsev

Proceedings Volume 4016, (1999) https://doi.org/10.1117/12.373654

KEYWORDS: Electroluminescence, Quantum wells, Semiconductors, Semiconductor lasers, Light emitting diodes, Chlorine, Semiconductor optoelectronics, Optoelectronic devices, Heterojunctions, Liquid phase epitaxy

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Showing 5 of 25 publications

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