Fabrication of structures with high aspect ratios (HAR) enables creation of metasurface optics with ever-increasing functionality. Dielectric meta-atoms consist of transverse (x,y) shapes extruded in the z-dimension. The phase discontinuity imparted by the meta-atom is a function of the dielectric constant of the material and the z-height of the meta-atom. The performance of the meta-optic improves with larger phase swings. Here we demonstrate HAR etched structures in silicon and gallium arsenide. Initial etch development employs interferometric lithography while final patterns are realized using e-beam patterning. The paper will discuss this etch development process for both material sets.
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