The continuing demand for higher frequency microprocessors and larger memory arrays has led to decreasing device dimensions and smaller process control windows. Decreasing process control windows have created a need for higher precision metrology to maintain an acceptable precision to tolerance ratio with a reasonable sampling rate. In order to determine and reduce across chip, across wafer, and across lot linewidth variations, higher sampling is required which, in turn, demands faster move acquire measure (MAM) times to maintain throughput. Finally, the need to detect and quantify sidewall angle changes in addition to CD measurements is becoming critical. Spectroscopic Scatterometry is a metrology technique which offers the potential to meet these requirements. This work explores some of the fundamental technology concerns for implementing scatterometry in a manufacturing environment. These concerns include mark requirements and characterization necessary for library generation. Comparison of scatterometry data to in-line CD SEM, x-section SEM, and AFM results will be presented.
We present terminal population of seven vibrational levels, v"=1-8, in Na2 supersonic beam formed by pure
Sodium expansion. It was determined by the laser induced fluorescence method for source pressure x nozzle diameter
product p0d=0.32, and covers 550-1550cm' energy range. The population forms a continuous, non-thermal
dependence of the internal energy, and does not depend much on the partitioning of this energy between vibration
and rotation. We think, that this new result is not in contradiction with observation of previous experiments, but
suggests new interpretations.
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