Dr. Mark Ma Profile

Dr. Mark Ma

Engineer at Photronics Inc

SPIE Involvement:

Author

Publications (15)

Proceedings Article | 9 September 2013 Paper

Performance of an automatic algorithm for quantifying critical dimensions in actinic aerial images

Doug Uzzel, Mark Ma, Shad Hedges, Saghir Munir

Proceedings Volume 8880, 88800B (2013) https://doi.org/10.1117/12.2027913

KEYWORDS: Inspection, Cadmium, Photomasks, Reticles, Opacity, Argon, Detection and tracking algorithms, Defect detection, Critical dimension metrology, Semiconducting wafers

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Proceedings Article | 28 June 2013 Paper

A method of utilizing AIMS to quantify substrate/attenuator over-etch or under-etch during mask repair

Vahagn Sargsyan, Kevin Olson, Doug Uzzel, Jon Morgan, Mark Ma, Gilles Tabbone, Anthony Garetto

Proceedings Volume 8701, 870109 (2013) https://doi.org/10.1117/12.2027883

KEYWORDS: Etching, Quartz, Analytical research, Critical dimension metrology, Process control, Attenuators, Atomic force microscopy, Photomasks, Opacity, Image processing

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Proceedings Article | 11 December 2009 Paper

Revisiting adoption of high transmission PSM: pros, cons and path forward

Z. Mark Ma, Steve McDonald, Chris Progler

Proceedings Volume 7520, 752017 (2009) https://doi.org/10.1117/12.838246

KEYWORDS: Photomasks, Lithography, SRAF, Quartz, Optical proximity correction, Etching, Critical dimension metrology, Manufacturing, Phase shifts, Lithographic illumination

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Proceedings Article | 28 June 2005 Paper

A reticle quality management strategy in wafer fabs addressing progressive mask defect growth problem at low k1 lithography

Kaustuve Bhattacharyya, Mark Eickhoff, Mark Ma, Sylvia Pas

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617122

KEYWORDS: Photomasks, Reticles, Inspection, Lithography, Semiconducting wafers, Data modeling, Failure analysis, Statistical analysis, 193nm lithography, Crystals

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Proceedings Article | 28 June 2005 Paper

An investigation of a new generation of progressive mask defects on the pattern side of advanced photomasks

Kaustuve Bhattacharyya, Mark Eickhoff, Brian Grenon, Mark Ma, Sylvia Pas

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617083

KEYWORDS: Photomasks, Ions, Inspection, Reticles, Raman spectroscopy, Crystals, Contamination, Chemical analysis, Fluorine, Lithography

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Proceedings Article | 10 May 2005 Paper

An investigation of a new generation of progressive mask defects on the pattern side of advanced photomasks

Kaustuve Bhattacharyya, Mark Eickhoff, Brian Grenon, Mark Ma, Sylvia Pas

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.601010

KEYWORDS: Photomasks, Ions, Reticles, Contamination, Inspection, Crystals, Chemical analysis, Fluorine, Air contamination, Manufacturing

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Proceedings Article | 6 December 2004 Paper

Design, mask, and manufacturability

Mark Ma, Hyesook Hong, Yong Seok Choi, Chi-Chien Ho, Mark Mason, Randy McKee

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569309

KEYWORDS: Photomasks, Manufacturing, Optical proximity correction, Resolution enhancement technologies, Semiconducting wafers, Reticles, Silicon, Design for manufacturing, Scanning electron microscopy, Metals

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Proceedings Article | 17 December 2003 Paper

Investigation of smart inspection of critical layer reticles using additional designer data to determine defect significance

William Volk, Carl Hess, Wayne Ruch, Zongchang Yu, Weimin Ma, Lisa Fisher, Carl Vickery, Z. Mark Ma

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518071

KEYWORDS: Inspection, Reticles, Manufacturing, Photomasks, Prototyping, Metals, Semiconducting wafers, System on a chip, Transistors, Yield improvement

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With expected implementation of low k1 lithography on 193nm scanners for 65nm node wafer production, high resolution defect inspection will be needed to insure reticle quality and reticle manufacture process monitoring. Reticle cost and reticle defectivity are both increasing with each shrink to the next node. Simultaneously, system on chip (SoC) designs are increasing in which a large area of the exposure field typically contains dummy patterns and other features which are not electrically active. Knowing which defects will electrically impact device yield and performance can improve reticle manufacturing yield and cycle time -- resulting in lower reticle costs. This investigation examines the feasibility of using additional design data layers for die-to-database reticle inspection to determine in real time the relevance of a reticle defect by its location in the device (Smart InspectionTM). The impact to data preparation and inspection throughput is evaluated. The current prototype algorithm is built on the XPA and XPE die-to-database algorithms for chrome-on-glass and EPSM reticles, respectively. The algorithms implement variable sensitivity based on the additional design data regions. During defect review the defects are intelligently binned into the different predetermined design regions. Tests show the new Smart Inspection algorithm provides the capability of using higher than normal sensitivity in critical regions while reducing sensitivity in less critical regions to filter total defect counts and allow for the review of just defects that matter. Performance characterization of a variable sensitivity Smart Inspection algorithm is discussed in addition to the filtering of the total defect count during review to show the defects that matter to device performance. Using seven critical layer production reticles from a system on chip device we examine the applications of Smart Inspection by layer including active, poly, contact, metal and via layers. Data volume for additional data layers show little impact to inspection data prep time. The total area of the reticle where defects do not matter is as high as 70% on some layers. Review capabilities will be examined for various applications such as reviewing defects in the various regions such as SRAM, dummy pattern, and redundant contact/via specified regions. Lastly, the economics of Smart Inspection will be modeled using the collected knowledge of the applications from the production reticle characterized in this investigation.

Proceedings Article | 1 August 2002 Paper

CD variations from nontrivial mask-related factors

Z. Mark Ma, Won Kim, Benjamen Rathsack, Guoqiang Xing, Mark Somervell, Hyesook Hong

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476928

KEYWORDS: Photomasks, Critical dimension metrology, Pellicles, Semiconducting wafers, Reticles, Calibration, Etching, Photoresist processing, Process control, Metrology

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Proceedings Article | 30 July 2002 Paper

OPC rectification of random space patterns in 193-nm lithography

Mosong Cheng, Andrew Neureuther, Keeho Kim, Z. Mark Ma, Won Kim, Maureen Hanratty

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474512

KEYWORDS: Optical proximity correction, Critical dimension metrology, Cadmium sulfide, Scanning electron microscopy, Process modeling, Photomasks, Printing, Lithography, Calibration, 193nm lithography

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Proceedings Article | 11 March 2002 Paper

Wafer FAB experience of implementing 50-kV vector e-beam mask writer and dry etch process for 130-nm technology node generation

Won Kim, Robert Bennett, Z. Mark Ma

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458310

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Etching, Dry etching, Photoresist processing, Scanning electron microscopy, Photomicroscopy, Mask making, Optical proximity correction

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Proceedings Article | 14 September 2001 Paper

Hidden CD errors due to reticle imperfection

Z. Mark Ma, Sandra Zheng

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435790

KEYWORDS: Reticles, Photomasks, Critical dimension metrology, Inspection, Semiconducting wafers, Optical proximity correction, Scanners, Cadmium, Photoresist processing, Image processing

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Proceedings Article | 14 September 2001 Paper

Impact of illumination coherence and polarization on the imaging of attenuated phase-shift masks

Z. Mark Ma, Chris Mack

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435694

KEYWORDS: Polarization, Phase shifts, Photomasks, Optical lithography, Coherence (optics), Resolution enhancement technologies, Optical proximity correction, Light, Spatial coherence, Lithography

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Proceedings Article | 29 June 1998 Paper

Preventing sidelobe printing in applying attenuated phase-shift reticles

Z. Mark Ma, Andrew Andersson

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310783

KEYWORDS: Printing, Reticles, Photomasks, Phase shifts, Semiconducting wafers, Imaging systems, Deep ultraviolet, Scanning electron microscopy, Diffraction, Binary data

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Proceedings Article | 7 July 1997 Paper

Yield management and reticle defects

Kent Ibsen, Mark Eickhoff, Z. Mark Ma, Sonya Shaw, Steven Carlson, H. Tomomatsu

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275972

KEYWORDS: Reticles, Semiconducting wafers, Lithography, Manufacturing, Photomasks, Wafer inspection, Inspection, Image processing, Defect inspection

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Showing 5 of 15 publications

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