Fundamental characterization of stochastic variation for improved single-expose EUV patterning at aggressive pitch

Jennifer Church; Luciana Meli; Jing Guo; Martin Burkhardt; Chris Mack; Anuja DeSilva; Karen Petrillo; Mary Breton; Ravi Bonam; Romain Lallement; Eric Miller; Brad Austin; Shravan Matham; Nelson Felix

doi:10.1117/12.2551487

23 March 2020 Fundamental characterization of stochastic variation for improved single-expose EUV patterning at aggressive pitch

Jennifer Church, Luciana Meli, Jing Guo, Martin Burkhardt, Chris Mack, Anuja DeSilva, Karen Petrillo, Mary Breton, Ravi Bonam, Romain Lallement, Eric Miller, Brad Austin, Shravan Matham, Nelson Felix

Author Affiliations +

Proceedings Volume 11323, Extreme Ultraviolet (EUV) Lithography XI; 113230O (2020) https://doi.org/10.1117/12.2551487
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

With aggressive scaling of single-expose EUV lithography to the sub-7 nm node, stochastic variations play a prominent role in defining the lithographic process window. Fluctuations in photon shot noise, absorption and subsequent chemical reactions can lead to stochastic failure, directly impacting electrical yield. Fundamental characterization of the mode and magnitude of these variations is required to define the threshold for failure. In this work, a complementary series of techniques is enlisted to probe the nature and modulation of stochastic variation in single exposure EUV patterning. Unbiased line edge roughness (LER), local critical dimension uniformity (LCDU) and defect inspection techniques are employed to monitor the frequency of stochastic variations leading to failures in line/space and via patterning. Using this methodology, we explore the modulation of stochastic variations by different photoresists and illuminations, with emphasis on material and process down-selection for improved yield at the sub-7 nm node.

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Jennifer Church, Luciana Meli, Jing Guo, Martin Burkhardt, Chris Mack, Anuja DeSilva, Karen Petrillo, Mary Breton, Ravi Bonam, Romain Lallement, Eric Miller, Brad Austin, Shravan Matham, and Nelson Felix "Fundamental characterization of stochastic variation for improved single-expose EUV patterning at aggressive pitch", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230O (23 March 2020); https://doi.org/10.1117/12.2551487

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