Presentation + Paper
27 April 2023 Massive overlay metrology solution by realizing imaging Mueller matrix spectroscopic ellipsometry
Author Affiliations +
Abstract
In recent years, the overlay specifications of advanced semiconductor devices have become extremely stringent. This challenging situation becomes severe for every new generation of the device development. However, conventional overlay metrology systems have limited throughput due to their point-based nature. Here, we first demonstrate the novel imaging Mueller-matrix spectroscopic ellipsometry (MMSE) technique, which can measure the overlay error of all cell blocks on a device wafer with extremely high throughput, much faster than conventional point-based spectroscopic ellipsometry (SE) technologies. It provides the super large field of view (FOV) ~ 20 × 20 mm2 together with high sensitivity based on Mueller information, which will be truly innovated solution not only for the overlay metrology, but also for critical dimension (CD) measurement, eventually maximizing process control and productivity of advanced node.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaehyeon Son, Juntaek Oh, Eunsoo Hwang, Jinwoo Ahn, Jaewon Lee, Byungkwan Oh, Donggun Lee, Seunga Lim, Kihun Kang, Sangil Im, Jibin Jeong, Taehyun Yun, Jinsoo Lee, Changhyeong Yoon, Hyukjoon Cho, Gangbu Kim, Byeongki Kang, Hankyoul Moon, Jong-hyun Hwang, Youngkyu Park, Taejoong Kim, Suyoung Lee, Yusin Yang, and Myungjun Lee "Massive overlay metrology solution by realizing imaging Mueller matrix spectroscopic ellipsometry", Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 124960L (27 April 2023); https://doi.org/10.1117/12.2657414
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KEYWORDS
Overlay metrology

Mueller matrices

Semiconducting wafers

Spectroscopic ellipsometry

Critical dimension metrology

Imaging spectroscopy

Metrology

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