Dr. Ekaterina Ponizovskaya-Devine Profile

Dr. Ekaterina Ponizovskaya-Devine

Research Scientist

SPIE Involvement:

Author

Area of Expertise:

photonics , physics , optics

Publications (14)

SPIE Journal Paper | 24 July 2023 Open Access

Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures

Wayesh Qarony, Ahmed Mayet, Ekaterina Ponizovskaya-Devine, Soroush Ghandiparsi, Cesar Bartolo-Perez, Ahasan Ahamed, Amita Rawat, Hasina Mamtaz, Toshishige Yamada, Shih-Yuan Wang, M. Saif Islam

APN, Vol. 2, Issue 05, 056001, (July 2023) https://doi.org/10.1117/12.10.1117/1.APN.2.5.056001

KEYWORDS: Silicon, Light absorption, Photodetectors, Ultrafast phenomena, Gallium arsenide, Absorption, Quantum efficiency, Group III-V semiconductors, Fabrication, Film thickness

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SPIE Journal Paper | 20 March 2023

Single microhole per pixel for thin Ge-on-Si complementary metal-oxide semiconductor image sensor with enhanced sensitivity up to 1700 nm

Ekaterina Ponizovskaya-Devine, Ahmed S. Mayet, Amita Rawat, Ahasan Ahamed, Shih-Yuan Wang, Aly F. Elrefaie, Toshishige Yamada, M. Saif Islam

JNP, Vol. 17, Issue 01, 016012, (March 2023) https://doi.org/10.1117/12.10.1117/1.JNP.17.016012

KEYWORDS: Germanium, Crosstalk, Tunable filters, Simulations, Optical filters, Image sensors, Silicon, Light absorption, Quantum efficiency, Near infrared

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Proceedings Article | 3 August 2021 Paper

Controlling light penetration depth to amplify the gain in ultra-fast silicon APDs and SPADs using photon-trapping nanostructures

Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Sulaiman Mayet, Soroush GhandiParsi, Xiangnan Zhou, Julien Bec, Nibir K. Dhar, Ekaterina P. Devine, Shih-Yuan Wang, Gerard Ariño-Estrada, Laura Marcu, M. Saif Islam

Proceedings Volume 11800, 118000F (2021) https://doi.org/10.1117/12.2597835

KEYWORDS: Absorption, Silicon, Avalanche photodetectors, Photonic nanostructures, Nanostructures, Avalanche photodiodes, Etching, Photonic devices, Photodiodes, Sensors

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Proceedings Article | 7 May 2019 Paper

Ultra-thin super absorbing photon trapping materials for high-performance infrared detection

Hossein Rabiee-Golgir, Soroush Ghandiparsi, Ekaterina Ponizovskaya Devine, Ahmed Mayet, Cesar Bartolo-Perez, Priyalal Wijewarnasuriya, Nibir Dhar, M. Saif Islam

Proceedings Volume 11002, 110020T (2019) https://doi.org/10.1117/12.2518690

KEYWORDS: Infrared detection

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The performance of mid- and long-wavelength infrared (IR) detectors is still restricted with the dark current characteristics and associated noise behavior. In this work, we propose reducing the dark current and related noise of the IR detectors to elevate high operating temperature and improve the detector quantum efficiency (QE), by using a thin absorption layer of IR absorbing materials like lead selenide (PbSe) and mercury cadmium telluride (HgCdTe). A photon bending and trapping mechanism based on integrated micro/nanoscale holes was employed to ensure high quantum efficiency despite using a thin absorbing layer. Using finite-difference time-domain (FDTD) method, the effect of embedded hole arrays on the optical absorption enhancement of ultra-thin PbSe and HgCdTe has been investigated. The calculated optical absorptions in ultra-thin IR structures without holes were compared with that of similar structures embedded with hole arrays. The optical absorption in 2 μm thick PbSe film without holes is less than 5% for 3-5 μm mid-IR wavelengths. Although applying conventional anti-reflecting (AR) coatings leads to a slightly higher absorption, it can cause higher dark current due to increased surface traps. Integration of hole arrays in 2 μm thick PbSe film has shown a significant optical absorption enhancement, up to 20% at 4.5 μm wavelength. This is equivalent to more than 2- and 4-folds' enhancement compared to a 2 μm thick flat-surface structure with AR and without AR, respectively. In addition, embedding the hole arrays in 1.2 μm thick HgCdTe IR films enhances the optical absorption up to 75% at 4.5 μm, which is more than 4 times higher than that in HgCdTe structure without holes. Additionally, the optical absorption in 1.2 μm thick HgCdTe film with periodic array of photon-trapping micro-holes enhances to 27% at 10 μm, long-IR wavelength. This is more that 3 times higher than that in HgCdTe films without holes. Our work revealed that the embedding hole arrays not only enhances the optical absorption in IR ultra-thin structures but also can reduce that material filling ratio to ~50%, which leads to a lower dark current, ensuring higher temperature operation of the IR detectors.

Proceedings Article | 17 September 2018 Presentation

Toward all-silicon optical receivers: photon trapping and manipulation using nanostructures (Conference Presentation)

Hilal Cansizoglu, Yang Gao, Cesar Bartolo Perez, Soroush Ghandiparsi, Kazim Polat, Hasina Mamtaz, Ekaterina Ponizovskaya Devine, Toshishige Yamada, Aly Elrefaie, Shih-Yuan Wang, Saif Islam

Proceedings Volume 10725, 107250B (2018) https://doi.org/10.1117/12.2323457

KEYWORDS: Palladium, Receivers, Nanostructures, Silicon, Ultrafast phenomena, Optical interconnects, Photodetectors, Integrated optics, Germanium, Semiconductors

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Development of cost-effective and power-efficient optical interconnects is required to meet high demand of data transfer in the era of Internet of Things (IoT) that is expected to connect billions of sensors with different functionalities. The cost of optical links must be reduced for a wide adoption of optical interconnects in the fast data transmission systems. Monolithic integration of ultra-fast photodetectors (PDs), one of the major components of optical receivers-with CMOS/BiCMOS circuits, can reduce the cost dramatically. However, expensive material systems and non-CMOS-compatible processing utilized in the current high-speed photodetectors do not promise a monolithic integration to the required circuitry in the near future. On the other hand, high speed PDs with CMOS-compatible material systems such as silicon (Si), germanium (Ge) or SiGe alloys have poor responsivity for the wavelengths of interest at data rates 10 Gb/s or higher. Our solution to this problem is to increase the optical absorption properties of the semiconductor by introducing micro-/nanoscale air holes to the material. Such micro/nanoholes support an ensemble of modes that propagate laterally inside in a very thin layer of semiconductor (<2µm) which is required for high speed operations. The recent demonstration of surface-illuminated high-speed (>25Gb/s) and high efficiency (>50%) Si PDs with integrated micro-/nanoholes proved that light bending can enable ultra-fast Si-based PDs for monolithic integration with CMOS/BiCMOS circuits to realize cost-effective all-Si optical receivers. In this talk, a review of state-of-the art ultra-fast Si PDs for short-reach data communication will be presented and high speed and high efficiency PDs with alternative Si-based material systems will be demonstrated for the applications in long-reach optical links. Future opportunities that light-bending phenomenon can offer in high performance PD design for various applications such as single photon detection, LIDAR and high-performance computing will be discussed.

Proceedings Article | 17 September 2018 Presentation

High efficiency flexible silicon photodetectors and photovoltaics (Conference Presentation)

Hilal Cansizoglu, Yang Gao, Cesar Bartolo Perez, Soroush Ghandiparsi, Ekaterina Ponizovskaya, Toshishige Yamada, Aly ElRefaie, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 10725, 107250F (2018) https://doi.org/10.1117/12.2323845

KEYWORDS: Silicon, Photodetectors, Photovoltaics, Crystals, Internet, Manufacturing, Photodiodes, Solar cells, Optical fiber cables, Receivers

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Proceedings Article | 31 May 2018 Paper

Black holes enabled light bending and trapping in ultrafast silicon photodetectors

Hilal Cansizoglu, Yang Gao, Soroush Ghandiparsi, Cesar Bartolo Perez, Hasina Mamtaz, Mehmet Cansizoglu, Toshishige Yamada, Ekaterina Ponizovskaya Devine, Aly Elrefaie, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 10639, 106390I (2018) https://doi.org/10.1117/12.2309830

KEYWORDS: Silicon, Absorption, Palladium, Data communications, Photons, Reflection, Ultrafast phenomena, Photodetectors, Refractive index, Semiconductors

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Proceedings Article | 25 August 2017 Paper

Highly efficient silicon solar cells designed with photon trapping micro/nano structures

Cesar Bartolo-Perez, Yang Gao, Hilal Cansizoglu, Soroush Ghandiparsi, Ahmet Kaya, Ahmed Mayet, Ekaterina Ponizovskaya Devine, Toshishige Yamada, Aly Elrefaie, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 10349, 103491D (2017) https://doi.org/10.1117/12.2276633

KEYWORDS: Solar cells, Photonic microstructures, Silicon, Photovoltaics, Absorption, Fabrication, Wet etching, Dry etching, Etching, Silicon solar cells

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Proceedings Article | 25 August 2017 Paper

Photon-trapping micro/nanostructures for high linearity in ultra-fast photodiodes

Hilal Cansizoglu, Yang Gao, Cesar Bartolo Perez, Soroush Ghandiparsi, Ekaterina Ponizovskaya Devine, Mehmet Cansizoglu, Toshishige Yamada, Aly Elrefaie, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 10349, 103491C (2017) https://doi.org/10.1117/12.2276612

KEYWORDS: Photonic microstructures, Ultrafast phenomena, Silicon, Photodetectors, Photodiodes, Data communications, Computer networks, Absorption

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Proceedings Article | 25 August 2017 Presentation + Paper

Fabrication of effective photon trapping and light manipulating micro/nano structures

Yang Gao, Hilal Cansizoglu, Soroush Ghandiparsi, Cesar Bartolo-Perez, Ekaterina Ponizovskaya Devine, Aly Elrefaie, Shih-yuan Wang, M. Saif Islam

Proceedings Volume 10349, 103490T (2017) https://doi.org/10.1117/12.2276503

KEYWORDS: Photonic microstructures, Fabrication, Silicon, Germanium, Absorption, Wet etching, Dry etching, Etching, Nanofabrication, Time correlated photon counting

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Proceedings Article | 25 August 2017 Presentation + Paper

Improved bandwidth and quantum efficiency in silicon photodiodes using photon-manipulating micro/nanostructures operating in the range of 700-1060 nm

Hilal Cansizoglu, Yang Gao, Soroush Ghandiparsi, Ahmet Kaya, Cesar Bartolo Perez, Ahmed Mayet, Ekaterina Ponizovskaya Devine, Mehmet Cansizoglu, Toshishige Yamada, Aly Elrefaie, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 10349, 103490U (2017) https://doi.org/10.1117/12.2276611

KEYWORDS: Silicon, Quantum efficiency, Photodetectors, Nanostructures, Photonic microstructures, Silicon photonics, Absorption, Photovoltaics

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Proceedings Article | 16 September 2016 Paper

Efficient Si photovoltaic devices with integrated micro/nano holes

Hilal Cansizoglu, Yang Gao, Ahmet Kaya, Soroush Ghandiparsi, Kazim Polat, Yichuan Wang, Runzhou Zhang, Hind Reggad, Ahmed Mayet, Ekaterina Ponizovskaya Devine, M. Saif Islam

Proceedings Volume 9924, 99240V (2016) https://doi.org/10.1117/12.2241794

KEYWORDS: Silicon, Photovoltaics, Crystals, Solar energy, Ions, Oxides, Oxidation, Solar cells, Absorption, Scanning electron microscopy

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Proceedings Article | 24 February 2009 Paper

Ultrafast response of negative index metamaterials in the near-infrared

David Cho, Wei Wu, Ekaterina Ponizovskaya, Pratik Chaturvedi, Alexander Bratkovksy, Shih-Yuan Wang, Xiang Zhang, Feng Wang, Y. Ron Shen

Proceedings Volume 7205, 72050V (2009) https://doi.org/10.1117/12.808455

KEYWORDS: Metamaterials, Nanoimprint lithography, Amorphous silicon, Modulation, Magnetism, Ultrafast phenomena, Refractive index, Femtosecond phenomena, Silicon, Reflectivity

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Proceedings Article | 18 November 2008 Paper

Properties of nanostructured metamaterials at optical frequencies

A. Bratkovsky, E. Ponozovkaya, E. Kim, W. Wu, Y. R. Shen, S.-Y. Wang, L. Thylen

Proceedings Volume 7135, 71352K (2008) https://doi.org/10.1117/12.807181

KEYWORDS: Metamaterials, Refractive index, Silver, Nanoparticles, Silicon, Modulation, Magnetism, Microwave radiation, Finite-difference time-domain method, Electromagnetism

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Showing 5 of 14 publications

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