Mr. Russell J. Dover Profile

Russell J. Dover

Product Marketing Manager at Lam Research

SPIE Involvement:

Author

Profile Summary

Currently focused on defending and growing market share, partnering with customers to develop a compelling product roadmap and creating growth opportunities in computational lithography (optical modelling).

I'm a results-driven product and services marketing and business development professional with 15+ years of comprehensive experience and visible achievements in high tech product marketing. I offer great skills and experience in product development (hardware and software), services marketing, business management, multi-tier communication (customers, engineers, executive management etc.) and people management.
Specialties

My area of expertise are data & market analysis, benchmarking, requirements creation, business development, business plans, competitive analysis, product development, direct marketing, market research, messaging, negotiation, positioning, process engineering, project management, sales support, sales training, strategic planning, market validation

Publications (17)

Proceedings Article | 12 April 2013 Paper

Paper

Imaging quality full chip verification for yield improvement

Qing Yang, CongShu Zhou, ShyueFong Quek, Mark Lu, YeeMei Foong, JianHong Qiu, Taksh Pandey, Russell Dover

Proceedings Volume 8683, 868326 (2013) https://doi.org/10.1117/12.2010661

KEYWORDS: Image quality, Image processing, Optical proximity correction, Semiconducting wafers, Etching, Metals, Resolution enhancement technologies, Photomasks, Nanoimprint lithography, Image enhancement

Read Abstract +

Basic image intensity parameters, like maximum and minimum intensity values (Imin and Imax), image logarithm slope (ILS), normalized image logarithm slope (NILS) and mask error enhancement factor (MEEF) , are well known as indexes of photolithography imaging quality. For full chip verification, hotspot detection is typically based on threshold values for line pinching or bridging. For image intensity parameters it is generally harder to quantify an absolute value to define where the process limit will occur, and at which process stage; lithography, etch or post- CMP. However it is easy to conclude that hot spots captured by image intensity parameters are more susceptible to process variation and very likely to impact yield. In addition these image intensity hot spots can be missed by using resist model verification because the resist model normally is calibrated by the wafer data on a single resist plane and is an empirical model which is trying to fit the resist critical dimension by some mathematic algorithm with combining optical calculation. Also at resolution enhancement technology (RET) development stage, full chip imaging quality check is also a method to qualify RET solution, like Optical Proximity Correct (OPC) performance. To add full chip verification using image intensity parameters is also not as costly as adding one more resist model simulation. From a foundry yield improvement and cost saving perspective, it is valuable to quantify the imaging quality to find design hot spots to correctly define the inline process control margin. This paper studies the correlation between image intensity parameters and process weakness or catastrophic hard failures at different process stages. It also demonstrated how OPC solution can improve full chip image intensity parameters. Rigorous 3D resist profile simulation across the full height of the resist stack was also performed to identify a correlation to the image intensity parameter. A methodology of post-OPC full chip verification is proposed for improving OPC quality at RET development stage and for inline process control and yield improvement at production stage.

Proceedings Article | 12 April 2013 Paper

Paper

3D resist profile full chip verification and hot spot disposition

Qing Yang, ShyueFong Quek, YeeMei Foong, Jens Hassmann, DongQing Zhang, Andre Leschok, Tang Yun, Mu Feng, Stanislas Baron, JianHong Qiu, Taksh Pandey, Bo Yan, Russell Dover

Proceedings Volume 8683, 86831N (2013) https://doi.org/10.1117/12.2010595

KEYWORDS: 3D modeling, Optical proximity correction, Etching, Photoresist processing, Semiconducting wafers, Metals, 3D image processing, Scanning electron microscopy, Computer simulations, Lithography

Read Abstract +

Proceedings Article | 12 April 2013 Paper

Paper

Best focus shift mitigation for extending the depth of focus

A. Szucs, J. Planchot, V. Farys, E. Yesilada, C. Alleaume, L. Depre, R. Dover, C. Gourgon, M. Besacier, A. Nachtwein, P. Rusu

Proceedings Volume 8683, 868313 (2013) https://doi.org/10.1117/12.2011114

KEYWORDS: Wavefronts, Photomasks, Calibration, Scanning electron microscopy, Semiconducting wafers, Scanners, Lithography, Metals, Optical proximity correction, Source mask optimization

Read Abstract +

Proceedings Article | 8 November 2012 Paper

Paper

A profile-aware resist model with variable threshold

Sylvain Moulis, Vincent Farys, Jérôme Belledent, Romain Thérèse, Song Lan, Qian Zhao, Mu Feng, Laurent Depre, Russell Dover

Proceedings Volume 8522, 85220A (2012) https://doi.org/10.1117/12.966383

KEYWORDS: Scanning electron microscopy, Data modeling, Atomic force microscopy, Calibration, Data centers, 3D modeling, Lithography, Photoresist processing, Double patterning technology, Electron beam lithography

Read Abstract +

Proceedings Article | 13 March 2012 Paper

Paper

Source mask optimization methodology (SMO) and application to real full chip optical proximity correction

DongQing Zhang, GekSoon Chua, YeeMei Foong, Yi Zou, Stephen Hsu, Stanislas Baron, Mu Feng, Hua-Yu Liu, Zhipan Li, Jessy Schramm, T. Yun, Carl Babcock, Byoung IL Choi, Stefan Roling, Alessandra Navarra, Tanja Fischer, Andre Leschok, Xiaofeng Liu, Weijie Shi, Jianhong Qiu, Russell Dover

Proceedings Volume 8326, 83261V (2012) https://doi.org/10.1117/12.916614

KEYWORDS: Source mask optimization, Optical proximity correction, Semiconducting wafers, Lithography, Electroluminescence, Scanning electron microscopy, Finite element methods, Etching, Critical dimension metrology, Image processing

Read Abstract +

Proceedings Article | 13 March 2012 Paper

Paper

Demonstration of an effective flexible mask optimization (FMO) flow

Charlotte Beylier, Nicolas Martin, Vincent Farys, Franck Foussadier, Emek Yesilada, Frederic Robert, Stanislas Baron, Russell Dover, Hua-yu Liu

Proceedings Volume 8326, 832616 (2012) https://doi.org/10.1117/12.916168

KEYWORDS: SRAF, Source mask optimization, Lithography, Optical proximity correction, Photomasks, Resolution enhancement technologies, Scanning electron microscopy, Lithium, Image enhancement, Computational lithography

Read Abstract +

Proceedings Article | 23 March 2011 Paper

Paper

Full-chip source and mask optimization

Min-Chun Tsai, Stephen Hsu, Luoqi Chen, Yen-Wen Lu, Jiangwei Li, Frank Chen, Hong Chen, Jun Tao, Been-Der Chen, Hanying Feng, William Wong, Wei Yuan, Xiaoyang Li, Zhipan Li, Liang Li, Russell Dover, Hua-yu Liu, Jim Koonmen

Proceedings Volume 7973, 79730A (2011) https://doi.org/10.1117/12.881633

KEYWORDS: Source mask optimization, Photomasks, SRAF, Optical proximity correction, Lithography, Manufacturing, Logic, Electroluminescence, Inspection, Lithium

Read Abstract +

Proceedings Article | 11 May 2009 Paper

Paper

Automated reticle inspection data analysis for wafer fabs

Derek Summers, Gong Chen, Bryan Reese, Trent Hutchinson, Marcus Liesching, Hai Ying, Russell Dover

Proceedings Volume 7379, 737935 (2009) https://doi.org/10.1117/12.824355

KEYWORDS: Reticles, Inspection, Semiconducting wafers, Data analysis, Defect inspection, Photomasks, Air contamination, Databases, Manufacturing, Error analysis

Read Abstract +

Proceedings Article | 24 March 2009 Paper

Paper

Automated reticle inspection data analysis for wafer fabs

Derek Summers, Gong Chen, Bryan Reese, Trent Hutchinson, Marcus Liesching, Hai Ying, Russell Dover

Proceedings Volume 7272, 72723P (2009) https://doi.org/10.1117/12.815545

KEYWORDS: Reticles, Inspection, Semiconducting wafers, Data analysis, Defect inspection, Photomasks, Air contamination, Databases, Manufacturing, Error analysis

Read Abstract +

Proceedings Article | 17 October 2008 Paper

Paper

Results of new mask contamination inspection capability STARlight2+ 72nm pixel with cell-to-cell HiRes5 for qualifying memory masks in wafer fabs

Raj Badoni, Jinggang Zhu, Russell Dover, Norbert Schmidt, Michael Lang, Andreas Jahnke, Florian Uhlig

Proceedings Volume 7122, 71223M (2008) https://doi.org/10.1117/12.802332

KEYWORDS: Inspection, Photomasks, Contamination, Semiconducting wafers, Sensors, Reticles, Crystals, Air contamination, SRAF, Wafer inspection

Read Abstract +

Proceedings Article | 17 October 2008 Paper

Paper

Crystal growth printability in an advanced foundry FAB: a correlation study between STARlight and ultra broadband BrightField inspection technologies

Teng Hwee Ng, Mohammed Fahmy bin Rahmat, Barry Saville, Patrick Pak, WeeTeck Chia, Aaron Chin, Mike VanRiet, Russell Dover, Raj Badoni

Proceedings Volume 7122, 712213 (2008) https://doi.org/10.1117/12.801868

KEYWORDS: Inspection, Reticles, Semiconducting wafers, Printing, Scanning electron microscopy, Defect detection, Crystals, Crystallography, Defect inspection, Contamination

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Proceedings Article | 17 October 2008 Paper

Paper

SL2+: H5 use case

Kosuke Ito, Steven Liu, Isaac Lee, Russell Dover, Paul Yu

Proceedings Volume 7122, 71223N (2008) https://doi.org/10.1117/12.802333

KEYWORDS: Inspection, Photomasks, Reticles, Sensors, Contamination, Semiconducting wafers, SRAF, Stars, Algorithm development, Defect detection

Read Abstract +

Proceedings Article | 17 October 2008 Paper

Paper

Automated reticle inspection data analysis for wafer fabs

Derek Summers, Gong Chen, Bryan Reese, Trent Hutchinson, Marcus Liesching, Hai Ying, Russell Dover

Proceedings Volume 7122, 71223F (2008) https://doi.org/10.1117/12.801524

KEYWORDS: Reticles, Inspection, Semiconducting wafers, Data analysis, Defect inspection, Photomasks, Air contamination, Databases, Manufacturing, Error analysis

Read Abstract +

Proceedings Article | 17 October 2008 Paper

Paper

Improving cost of ownership on KLA-Tencor wafer fab reticle inspections by implementing pixel migration via new STARlight2+ capability

Yung-Feng Cheng, Wei-Cyuan Lo, Ming-Jui Chen, Peter Huang, Chunlin Chen, Swapnajit Chakravarty, Paul Yu, Russell Dover

Proceedings Volume 7122, 71223J (2008) https://doi.org/10.1117/12.802331

KEYWORDS: Inspection, Photomasks, Reticles, Semiconducting wafers, Air contamination, Wafer inspection, Metals, Microelectronics, Data processing, Image processing

Read Abstract +

Proceedings Article | 19 May 2008 Paper

Paper

Results of new mask contamination inspection capability STARlight2+ 72nm pixel for qualifying memory masks in wafer fabs

Russell Dover, Jinggang Zhu, Norbert Schmidt, Michael Lang

Proceedings Volume 7028, 70282N (2008) https://doi.org/10.1117/12.793093

KEYWORDS: Inspection, Photomasks, Contamination, Semiconducting wafers, SRAF, Signal detection, Detection and tracking algorithms, Defect inspection, Wafer inspection, Defect detection

Read Abstract +

Proceedings Article | 19 May 2008 Paper

Paper

Improving COO on KLA-Tencor wafer fab reticle inspections by implementing pixel migration as new STARlight2+ capability

S. Yen, Swapnajit Chakravarty, Joe Huang, John Miller, Russell Dover, Den Wang

Proceedings Volume 7028, 70282O (2008) https://doi.org/10.1117/12.793094

KEYWORDS: Inspection, Reticles, Semiconducting wafers, Wafer inspection, Air contamination, Calibration, Systems modeling, Defect detection, Photomasks, Computing systems

Read Abstract +

Proceedings Article | 1 November 2007 Paper

Paper

Industry survey of wafer fab reticle quality control strategies in the 90nm-45nm design-rule age

Russell Dover

Proceedings Volume 6730, 67305B (2007) https://doi.org/10.1117/12.745389

KEYWORDS: Photomasks, Semiconducting wafers, Inspection, Reticles, Logic, Lithography, Crystals, Contamination, Metals, Air contamination

Read Abstract +

Showing 5 of 17 publications

Conference Committee Involvement (8)

SEMI IEEE Advanced Semiconductor Manufacturing Conference (ASMC)

15 May 2012 |

SEMI IEE Advanced Semiconductor Manufacturing Conference (ASMC)

16 May 2011 |

SEMI IEE Advanced Semiconductor Manufacturing Conference (ASMC)

12 July 2010 |

SEMI IEE Advanced Semiconductor Manufacturing Conference (ASMC)

5 May 2008 |

SEMI IEE Advanced Semiconductor Manufacturing Conference (ASMC)

11 June 2007 |

Showing 5 of 8 Conference Committees

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