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Tight tolerances on the grazing angles of the X-ray mirrors require precision alignment and assembly of each component via a coordinate measuring machine, and a comprehensive off-line calibration of the four KB channels at X-ray wavelengths. The main goals of the calibration campaign are to measure the performance of the multilayer, validate the assembly procedure by measuring the as-built spatial resolution and determine the best object to mirror pack distance (drive depth) of the microscope for fielding at NIF. We report on the results of this effort on the first fully assembled NIF KB X-ray imager.
This paper will present an update from the 0.5 NA EUVL program. We will detail the more significant activities that are being undertaken to upgrade the MET and discuss expected performance.
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This course provides attendees with a full overview of the fundamentals, current status, and technical challenges of EUV Lithography. Topics covered include EUV Sources, EUV Source Metrology, EUV Optics, EUV systems and patterning, and EUV Mask. We will begin with an overview of the history of EUVL and cover EUV sources, EUV source metrology and EUV optics. Next is a discussion of EUVL systems and patterning. We cover the fundamental components of EUV systems and address similarities and differences to optical lithography systems. This section also covers patterning issues including flare, LER, and resist performance. We continue with an exploration of EUVL Mask technology issues such as design, materials including reflective multilayers, process and metrology. Finally we conclude with a Status Review of EUVL. Course material will be drawn from the accompanying texts EUV Sources for Lithography and EUV Lithography.
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